Abstract:The tetraethyl orthosilicate is introduced into CZTSSe precursor solution as a source of silicon to partially substitute Sn with Si for fabrication of CZTSSe device, giving rise to favorable functions in terms of passivating SnZn defects and optimizing energy level alignment. Consequently, the CZTSSe device with 7% Si substitution acquires a PCE of 13.02% due to the enhancement of Voc. The SnZn defect passivation and heterojunction interface energetics‐modification are crucial for further improvement of open‐circuit voltage (Voc) and efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Herein, a simple but effective cation substitution strategy is reported to promote the performance of CZTSSe devices by simultaneously modifying the absorber and heterojunction interface. This is achieved by introducing the organic silicon salt C8H20O4Si into CZTSSe precursor solution as a source of silicon to partially substitute Sn with Si. Systematic studies reveal that there are two mechanisms synergistically contributing to the increase of efficiency: 1) This strategy can passivate the undesired SnZn defect in CZTSSe absorber more efficiently, leading to at least one order of magnitude lower SnZn defect density and beneficial carrier transport properties; 2) After Si incorporation, the conduction band minimum of the CZTSSe is upshifted, thus enlarging the bandgap, which ultimately optimizes the energy level structure at the CdS/CZTSSe interface and reduces interfacial energy loss by decreasing the carrier transport barrier. Consequently, the CZTSSe device with 7% Si substitution delivers a satisfactory efficiency of 13.02% owing to an increase in Voc. It is hoped the Si substitution strategy reported here can provide inspiration for developing advanced CZTSSe devices with broad application prospects.

Synergetic Effects of Zn Alloying and Defect Engineering on Improving the CdS Buffer Layer of Cu2ZnSnS4 Solar Cells

Formation of Alloyed Cu2Cox Zn1-x Sn(S,Se)4 Absorption Layer and Its Application in Solar Cells

Formation of Alloyed Cu2CoxZn1-xSn(S,Se)4 Absorption Layer and Its Application in Solar Cells.

CdS(In)/CZTSSe bandgap alignment engineering for performance enhancement of solar cells without ZnO layer

Influence of Cd0.6Zn0.4S buffer layer on the band alignment and the performance of CZTS thin film solar cells

Doping Behavior of Zn in CdS and Its Effect on the Power Conversion Efficiency of the Cu2ZnSn(S, Se)4 Solar Cell

Realizing zinc-doping of CdS buffer layer via partial electrolyte treatment to improve the efficiency of Cu2ZnSnS4 solar cells

Se as hetero-nucleation seeds reinforcing intermetallic diffusion for improved electrodeposition-processed CZTS solar cells

Atomic-Scale Interface Modification Improves the Performance of Cu(In1- xGax)Se2/Zn(O,S) Heterojunction Solar Cells

Multinary Alloying Suppresses Defect Formation in Emerging Inorganic Solar Cells

Energy Band Alignment at p-n Heterojunction Interface in CZTSSe Solar Cells with Novel ZnMgO Buffer Layer

Defect Engineering in Earth‐Abundant Cu2ZnSn(S,Se)4 Photovoltaic Materials Via Ga3+‐Doping for over 12% Efficient Solar Cells

Passivating SnZn Defect and Optimizing Energy Level Alignment via Organic Silicon Salt Incorporation toward Efficient Solution‐Processed CZTSSe Solar Cells

Toward High Efficient Cu2 ZnSn(Sx ,Se1- x )4 Solar Cells: Break the Limitations of VOC and FF

Sputtering Deposited and Energy Band Matched ZnSnN2 Buffer Layers for Highly Efficient Cd‐Free Cu2ZnSnS4 Solar Cells

Enhancing Ag-alloyed Cu 2 ZnSnS 4 solar cell performance by interfacial modification via In and Al

Boost the efficiency of Cu2ZnSn(S,Se)4 solar cell by using Mn2+ induced ultra‐thin CdS buffer layer

Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells

Heterojunction Interface Passivation Strategy for Cu(In1-x,Gax)Se2 Solar Cell with Nano-Level Engineering of Zn-based Buffer Structure Via Atomic Layer Deposition Method

Li-based Selenized Cu2ZnSnS4 Surface: Possible Route to Overcoming Voc-Deficit of Kesterite Solar Cells

Interface Recombination of Cu 2 ZnSnS 4 Solar Cells Leveraged by High Carrier Density and Interface Defects