Abstract:The tetraethyl orthosilicate is introduced into CZTSSe precursor solution as a source of silicon to partially substitute Sn with Si for fabrication of CZTSSe device, giving rise to favorable functions in terms of passivating SnZn defects and optimizing energy level alignment. Consequently, the CZTSSe device with 7% Si substitution acquires a PCE of 13.02% due to the enhancement of Voc. The SnZn defect passivation and heterojunction interface energetics‐modification are crucial for further improvement of open‐circuit voltage (Voc) and efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Herein, a simple but effective cation substitution strategy is reported to promote the performance of CZTSSe devices by simultaneously modifying the absorber and heterojunction interface. This is achieved by introducing the organic silicon salt C8H20O4Si into CZTSSe precursor solution as a source of silicon to partially substitute Sn with Si. Systematic studies reveal that there are two mechanisms synergistically contributing to the increase of efficiency: 1) This strategy can passivate the undesired SnZn defect in CZTSSe absorber more efficiently, leading to at least one order of magnitude lower SnZn defect density and beneficial carrier transport properties; 2) After Si incorporation, the conduction band minimum of the CZTSSe is upshifted, thus enlarging the bandgap, which ultimately optimizes the energy level structure at the CdS/CZTSSe interface and reduces interfacial energy loss by decreasing the carrier transport barrier. Consequently, the CZTSSe device with 7% Si substitution delivers a satisfactory efficiency of 13.02% owing to an increase in Voc. It is hoped the Si substitution strategy reported here can provide inspiration for developing advanced CZTSSe devices with broad application prospects.

In-doping collaboratively controlling back interface and bulk defects to achieve efficient flexible CZTSSe solar cells

Heterojunction Reconstruction Via in Doping Towards High-Efficiency CZTSSe Solar Cells

A New Insight of In-doped Cu2ZnSn(S,Se)4 Thin Films for Photovoltaic Application

Positive Role of Inhibiting CZTSSe Decomposition on Intrinsic Defects and Interface Recombination of 12.03% Efficient Kesterite Solar Cells

Defect Synergistic Regulations of Li&Na Co‐Doped Flexible Cu2ZnSn(S,Se)4 Solar Cells Achieving over 10% Certified Efficiency

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Energy Band Alignment and Defect Synergistic Regulation Enable Air-Solution-Processed Kesterite Solar Cells with the Lowest VOC Deficit.

CdS(In)/CZTSSe bandgap alignment engineering for performance enhancement of solar cells without ZnO layer

Structural, Optical and Electrical Properties of Indium Doped Cu2ZnSn(S,Se)4 Thin Films Synthesized by the DC and RF Reactive Magnetron Cosputtering

Passivating SnZn Defect and Optimizing Energy Level Alignment via Organic Silicon Salt Incorporation toward Efficient Solution‐Processed CZTSSe Solar Cells

Achieving 11.23 % Efficiency in CZTSSe Solar Cells Via Defect Control and Interface Contact Optimization

Toward High Efficient Cu2 ZnSn(Sx ,Se1- x )4 Solar Cells: Break the Limitations of VOC and FF

Realization of Grain Growth and Suppressed Bulk Defects for Efficient Solution-Processed Cu2ZnSn (S, Se)4 Solar Cells Via Co-Doping Strategy

Toward High Efficient Cu2ZnSn(Sx,Se1−x)4 Solar Cells: Break the Limitations of VOC and FF

Synergistic Crystallization Modulation and Defects Passivation in Kesterite via Anion-Coordinate Precursor Engineering for Efficient Solar Cells

High Efficiency Cu 2 ZnSn(S,Se) 4 Solar Cells with Shallow Li Zn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment

High Efficiency Cu2ZnSn(S,Se)4 Solar Cells with Shallow LiZn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment

Promising Cd-free double buffer layer in CZTSSe thin film solar cells

Viable Strategy for Suppressing Antisite Defects and Band Tailing States in Solution-Processed Kesterite Solar Cells Via IIIA Incorporation: Case of Aluminum

Improvement of Performance of CZTSSe Solar Cells by the Synergistic Effect of Back Contact Modification and Ag Doping.