Abstract:Kesterite Cu2ZnSn(S, Se)4 (CZTSSe) solar cell has emerged as one of the most promising candidates for thin-film photovoltaics. However, severe charge losses occurring at the grain boundaries (GBs) of Kesterite polycrystalline absorbers has hindered the improvement of cell performance. Herein, we report a redox reaction strategy involving palladium (Pd) to eliminate atomic vacancy defects such as VSn and VSe in GBs of the Kesterite absorbers. We demonstrate that PdSex compounds could form during the selenization process and distribute at the GBs and the absorber surfaces; thereby aid in the suppression of Sn and Se volatilization loss and inhibiting the formation of VSn and VSe defects. Furthermore, Pd(II)/Pd(IV) serves as a redox shuttle, i.e., on one hand, Pd(II) captures Se vapor from the reaction environment to produce PdSe2, on the other hand, PdSe2 provides Se atoms to the Kesterite absorber by being reduced to PdSe, thus contributing to the elimination of pre-existing VSe defects within GBs. These effects collectively reduce defects and enhance the p-type characteristics of the Kesterite absorber, leading to a significant reduction in charge recombination loss within the cell. As a result, high-performance Kesterite solar cells with a total-area efficiency of 14.5% have been achieved. This remarkable efficiency increase benefited from the redox reaction strategy offers a promising avenue for the precise regulation of defects in Kesterite solar cells and holds generally significant implications for the exploration of various other photovoltaic devices.

What problem does this paper attempt to address?

This paper aims to solve the problem of severe charge loss at the grain boundaries (GBs) in Kesterite Cu₂ZnSn(S,Se)₄ (CZTSSe) solar cells. Specifically, the paper proposes a method to regulate grain - boundary defects through palladium (Pd) doping to reduce the volatilization losses of Sn and Se elements and the resulting VSn and VSe defects, thereby improving the overall performance of solar cells. ### Background of the paper Kesterite CZTSSe solar cells have received extensive attention for their potential as thin - film photovoltaic devices. However, the severe non - radiative charge recombination at the grain boundaries hinders the improvement of their efficiency. These grain boundaries usually have high structural distortion and atomic disorder, and are prone to form various defects, such as Se - Se dimers, conductive secondary phases (such as CuₓSe and SnS), and VSn and VSe defects caused by the volatilization losses of Sn and Se. These problems lead to a significant decrease in the open - circuit voltage (VOC), which in turn affects the overall performance of the cell. ### Solution The paper proposes a redox reaction strategy based on palladium (Pd) to solve the above problems through the following mechanisms: 1. **Formation of PdSeₓ compounds**: - During the selenization process, Pd can react with Se to form PdSe and PdSe₂ compounds, which are distributed at the grain boundaries and on the surface to form a heterogeneous coating layer. - These compounds can effectively inhibit the volatilization of Sn and Se elements and reduce the formation of VSn and VSe defects. 2. **Pd(II)/Pd(IV) redox cycle**: - Pd(II) can capture Se vapor in the reaction environment to form PdSe₂. - PdSe₂ can provide Se atoms to the CZTSSe absorption layer through a reduction reaction to fill the existing VSe defects. ### Experimental results - **Element distribution**: - STEM and EELS characterizations show that Pd is mainly distributed in the grain - boundary regions, forming PdSe and PdSe₂ compounds. - XPS analysis indicates that PdSeₓ compounds mainly exist at the grain boundaries and on the surface, effectively reducing the volatilization losses of Sn and Se. - **Electrical properties**: - KPFM measurements show that the Pd - doped CZTSSe absorption layer has more stable surface electrical properties and more obvious p - type characteristics. - PL measurements indicate that the Pd - doped samples have a longer carrier lifetime and a higher steady - state PL intensity, indicating that the carrier recombination rate is significantly reduced. - **Device performance**: - The solar cell with the best performance achieved a total - area efficiency of 14.5% (the certified efficiency is 14.3%), which is significantly higher than that of the undoped control sample (12.8%). - EQE measurements show that the Pd - doped samples exhibit better photogenerated - carrier extraction ability in the wavelength range of 600 - 1080 nm. ### Conclusion By introducing Pd and using its redox reaction mechanism, the paper successfully reduces the defects at the grain boundaries of Kesterite CZTSSe solar cells and improves the overall performance of the cells. This strategy not only provides a new approach for the further optimization of Kesterite solar cells, but also provides a valuable reference for the grain - boundary engineering research of other photoelectric devices.

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