Competitive growth of Cu 3 Sn and Cu 6 Sn 5 at Sn/Cu interface during various multi-reflow processes

Min Shang,Chong Dong,Jinye Yao,Chen Wang,Haoran Ma,Haitao Ma,Yunpeng Wang
DOI: https://doi.org/10.1007/s10854-021-06711-x
2021-01-01
Abstract:The competitive growth of Cu 3 Sn and Cu 6 Sn 5 in the multi-reflow processes induced by temperature, time, and cooling rate was systematically studied in this work. Results indicated that the thickness proportion of Cu 3 Sn in the IMC layer was highly promoted in the temperature-increased multi-reflow process and slightly increased with a fluctuation in the isothermal multi-reflow process, while obviously decreased in the temperature-decreased multi-reflow process. The proportion of Cu 3 Sn grew following the increase of reflow temperature, time, and cooling rate and the thickness of Cu 3 Sn formed at the central of the Cu 6 Sn 5 bottom was higher than that formed at the edge. The results have a significant meaning in understanding and controlling the competitive growth of Cu 3 Sn and Cu 6 Sn 5 and improving the reliability of solder joints.
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