Abstract:In this study, the oxygen flow rate (OFR) dependence of negative bias illumination stress (NBIS) and positive bias stress (PBS) in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices was investigated. Unlike in previous studies, our study simultaneously considered and analyzed the bias stress-induced degradation mechanisms by charge trapping and defect creation. NBIS and PBS instability were measured according to the OFR splits of bottom-gate (BG) IGZO TFTs and the behavior of full subgap range density of states (DOS) was experimentally tracked with especial emphasis on deep-level oxygen vacancy (${V}_{\text {O}}$ ) peak. It was found that the observed DOS variation was consistent with the ${V}_{\text {O}}$ ionization model during NBIS. In addition, the threshold voltage shift by charge trapping (${\Delta } {V}_{\text {T,CT}}$ ) and the threshold voltage shift by defect creation, i.e., change of DOS, (${\Delta } {V}_{\text {T,DOS}}$ ) were separated and extracted through the subthreshold slope decomposition method. After NBIS, the threshold voltage shift (${\Delta } {V}_{\text {T}}$ ) was composed of a component by charge trapping and a component with the ionization of ${V}_{\text {O}}$ . After PBS, ${\Delta } {V}_{\text {T}}$ was dominated by a component arising due to charge trapping. Fitting through the stretched exponential function (SEF) was performed for each separately extracted ${\Delta } {V}_{\text {T}}$ , and the activation energy for each ${\Delta } {V}_{\text {T}}$ was extracted using the inverse Laplace transform method through the extracted ${\Delta } {V}_{\text {T0}}$ , $\tau $ , and $\beta $ . Activation energy by charge trapping and DOS was extracted from NBIS and PBS, respectively. As a result of simultaneously considering the two degradation mechanisms, the extracted activation energy was located between the previous values. Experimentally extracted sets of DOS-specific parameters before and after bias stress were applied to technology computer-aided design (TCAD) simulations. Accurate reproduction of TFT current–voltage (${I}$ –${V}$ ) curves before and after bias stress and recovery suggests that the methodology and parameter set used in this study are reasonable and potentially useful for a more robust and systematic analysis of the bias stress-induced instability in a-IGZO BG TFTs.

Influence of Ambient Humidity on the Stability of Negative Bias Illumination for Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics

Degradation of Current–voltage and Low Frequency Noise Characteristics under Negative Bias Illumination Stress in InZnO Thin Film Transistors

Influence of White Light Illumination on the Performance of A-Igzo Thin Film Transistor under Positive Gate-Bias Stress

Abnormal Threshold Voltage Shift and Sub-channel Generation in Top-Gate InGaZnO TFTs under Backlight Negative Bias Illumination Stress

Effect of Humidity on Properties of Aqueous-Processed Tb-Doped Indium Oxide Thin-Film Transistors

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Abnormal Bias Instabilities Induced by Lateral H2O Diffusion into Top-Gate Insulator of A-Ingazno Thin-Film Transistors

Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

Stability of Low Temperature and Transparent Amorphous Ingazno Thin Film Transistor under Illumination

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs

The Effect Of Asymmetrical Electrode Form After Negative Bias Illuminated Stress In Amorphous Igzo Thin Film Transistors (Vol 110, 103502, 2017)

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Influence Of Passivation Layers On Positive Gate Bias-Stress Stability Of Amorphous Ingazno Thin-Film Transistors

Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress

The Calculation of Negative Bias Illumination Stress-Induced Instability of Amorphous InGaZnO Thin-Film Transistors for Instability-Aware Design