Abstract:Abstract We deposited high-quality molybdenum disulfide (MoS 2 ) monolayer and multilayer crystals on SiO 2 /Si substrates, by means of a chemical vapor deposition (CVD) process at atmospheric pressure. Notably, NaCl salt was used as component of the precursors to assist the growth of MoS 2 crystals, which were intended for use as the active channel layer in the fabrication of field-effect transistors (FETs). The resulting MoS 2 crystals from this CVD process were analyzed by optical, scanning electron, and atomic force microscopies, and by Raman and photoluminescence spectroscopies. The optical images and the micrographs obtained by SEM revealed the formation of dispersed MoS 2 crystals with a triangular shape all over the SiO 2 surface. The thickness of the MoS 2 crystals, analyzed by atomic force microscopy, showed minimum values of around 0.7 nm, confirming the formation of monolayers. Additionally, multilayers with larger thickness were also identified. The Raman and photoluminescence spectra of the MoS 2 crystals corroborated the formation of single and multiple layers. The fabrication of the FET back-SiO 2 -gate configuration was made by depositing patterned source and drain Ti contacts on the dispersed MoS 2 crystals to achieve the Ti/MoS 2 /SiO 2 /Si layer stacks. MoS 2 -based FETs with one and three layers were assembled and their electrical response analyzed by I–V output and transfer curves showing the typical characteristics of an n -type semiconductor channel operating in depletion mode. The electrical performance parameters of the devices, such as mobility and threshold voltage, were also determined from this analysis. Finally, to enhance their electrical response, the MoS 2 -based devices were thermally annealed at 200 °C for 30 min in Ar atmosphere. The increase in the mobility of the device was 176% compared to the device before the treatment.

Largely Enhanced Mobility of MoS2 Field-Effect Transistors by Optimizing O2-Plasma Treatment on MoS2

Charge neutral MoS2 field effect transistors through oxygen plasma treatment

High-quality MoS2 monolayers with largely enhanced electrical properties by plasma-treated SiO2/Si substrates based chemical vapor deposition

Oxide-mediated self-limiting recovery of field effect mobility in plasma-treated MoS$_2$

The Optimization of Contact Interface Between Metal/mos2 FETs by Oxygen Plasma Treatment

The Evolution of MoS2 Properties under Oxygen Plasma Treatment and Its Application in MoS2 Based Devices

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

Enhancement of Carrier Mobility in Mos2 Field Effect Transistors by A Sio2 Protective Layer

Multilayer MoS2 Transistors Enabled by a Facile Dry-Transfer Technique and Thermal Annealing

Enhanced Mobility in MoS2 Thin Film Transistors Through Kr Ion Beam-Generated Surface Defects

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Improving Electron Mobility in MoS2 Field-Effect Transistors by Optimizing the Interface Contact and Enhancing the Channel Conductance Through Local Structural Phase Transition

Improving electron mobility in MoS 2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Low-Defect-Density Monolayer MoS2 Wafer by Oxygen-Assisted Growth-Repair Strategy

Remote N-2 Plasma Treatment to Deposit Ultrathin High-K Dielectric As Tunneling Contact Layer for Single-Layer MoS2 MOSFET

Effect of Thickness and Thermal Treatment on the Electrical Performance of 2D MoS2 Monolayer and Multilayer Field-Effect Transistors

Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing

Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte

Enhanced Electrical Properties Of Lithography-Free Fabricated Mos2 Field Effect Transistors With Chromium Contacts

Implementing Remote Doping and Suppressed Scattering in MoS2 Field-Effect Transistor Using CMOS-Compatible Process