Abstract:We reported a low-temperature solution-processed method for the fabrication of AlOx thin films in the memory device. The detailed study is carried out to figure out the effect of varying annealing temperatures (150, 200, 250, 300, and 350 degrees C) on resistive switching characteristics of solution-processed aluminum oxide dielectric. The dielectric properties of AlOx films under different annealing temperatures were evaluated by atomic force microscopy (AFM), thermogravimetric analysis-differential scanning calorimetry (TGA-DSC), X-ray diffraction (XRD), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectroscopy (XPS) firstly. Then the AlOx films were used as the switching dielectric layer for a variety of low-temperature solution-processed oxide resistive random access memory (RRAM) devices. It was found that forming voltage increased with increasing annealing temperature and forming free behavior could be achieved by 200 degrees C sample. No repeatable resistance switching characteristics were observed in the devices with minimum (150 degrees C) and maximum (350 degrees C) annealing temperatures. Compared with the ALD-derived AlOx based RRAM devices in previous study, enhanced performance like small forming voltage, large resistance ratio (<180) and narrow resistance and voltage distribution was achieved by the solution-processed AlOx based ones at the optimized low annealing temperatures of 200 to 250 degrees C, which would be applied in the bionic circuit simulated by synapses and neural networks. All three samples (200, 250, and 300 degrees C) obtained switching endurance up to 300 cycles and data retention over 10(4) s. Furthermore, the solution based fabrication method also has the potential in the flexible memory application due to the merit of the low-temperature process.

Performance Variation of Solution-Processed Memristor Induced by Different Top Electrode

Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Characteristics of Ni/AlOx/Pt RRAM Devices with Various Dielectric Fabrication Temperatures

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Enhanced Resistive Switching Performance of Aluminum Oxide Dielectric with a Low Temperature Solution-Processed Method

HfOx Bipolar Resistive Memory with Robust Endurance Using ZrNx As Buttom Electrode

Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory

Study of the Bipolar Resistive‐switching Behaviors in Pt/GdOx/TaNx Structure for RRAM Application

Electrode-material dependent switching in TaO x memristors

Electrode-Induced Digital-To-Analog Resistive Switching in Taox-Based Rram Devices

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Influence of Non-Inert Electrode Thickness on the Performance of Complementary Resistive Switching in AlOxNy-based RRAM

Comparisons of Switching Characteristics Between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM Devices with Various Compliance Currents

Performance Improvement of an Al/TiO2/Al Electronic Bipolar Resistive Switching Memory Cell Via Inserting an Ultrathin ZrO2 Layer

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO2-Based Memristive Devices

Resistive Switching Performance of Memristor with Solution-Processed Stacked MO/2D-materials Switching Layers

Temperature Dependence of Electrical Properties and Conduction Mechanism of SiN<sub>x</sub>‐based RRAM

Influence of non-inert electrode thickness on the performance of complementary resistive switching in AlO<sub>x</sub>N<sub>y</sub>-based RRAM