Abstract:Here, composition‐graded Hf1‐xZrxO2 ferroelectric thin films possessing more than two times faster polarization switching speed and better endurance characteristics than the conventional composition‐uniform one are demonstrated. The transition of polarization switching dynamics from the nucleation‐limited‐switching mechanism to the domain‐wall growth mechanism is responsible for these enhanced properties in the composition‐graded Hf1‐xZrxO2 thin films. The next‐generation semiconductor memories are essentially required for the advancements in modern electronic devices. Ferroelectric memories by HfO2‐based ferroelectric thin films (FE‐HfO2) have opened promising directions in recent years. Nevertheless, improving the polarization switching speed of FE‐HfO2 remains a critical task. In this study, it is demonstrated that the composition‐graded Hf1‐xZrxO2 (HZO) ferroelectric thin film has more than two times faster polarization switching speed than the conventional composition‐uniform one. Meanwhile, it has excellent ferroelectricity and improved endurance characteristics. It is also discovered that when the HZO thin film has a gradient composition, the polarization‐switching dynamics shifts from the nucleation‐limited‐switching mechanism to the domain‐wall growth mechanism. Moreover, the transition of switching dynamics is responsible for the faster speed and better endurance of the composition‐graded HZO thin film. These findings not only reveal the physical mechanisms of this material system but also provide a new strategy for memory devices having faster speed and higher endurance.

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