Abstract:Silicon thin films with a variable content of nanocrystalline phase were deposited on single-crystal silicon and glass substrates by inductively coupled plasma-assisted chemical vapor deposition using a silane precursor without any hydrogen dilution in the low substrate temperature range from 100 to 300 degrees C. The structural and optical properties of the deposited films are systematically investigated by Raman spectroscopy, x-ray diffraction, Fourier transform infrared absorption spectroscopy, UV/vis spectroscopy, scanning electron microscopy and high-resolution transmission electron microscopy. It is shown that the structure of the silicon thin films evolves from the purely amorphous phase to the nanocrystalline phase when the substrate temperature is increased from 100 to 150 degrees C. It is found that the variations of the crystalline fraction f(c), bonded hydrogen content C(H), optical bandgap E(Tauc), film microstructure and growth rate R(d) are closely related to the substrate temperature. In particular, at a substrate temperature of 300 degrees C, the nanocrystalline Si thin films of our interest feature a high growth rate of 1.63 nm s(-1), a low hydrogen content of 4.0 at.%, a high crystalline fraction of 69.1%, a low optical bandgap of 1.55 eV and an almost vertically aligned columnar structure with a mean grain size of approximately 10 nm. It is also shown that the low-temperature synthesis of nanocrystalline Si thin films without any hydrogen dilution is attributed to the outstanding dissociation ability of the high-density inductively coupled plasmas and effective plasma-surface interactions during the growth process. Our results offer a highly effective yet simple and environmentally friendly technique to synthesize high-quality nanocrystalline Si films, vitally needed for the development of new-generation solar cells and other emerging nanotechnologies.

Abnormal Crystallization of Silicon Thin Films Deposited by Icp-Cvd

Aluminum-induced Crystallization During Deposition of Silicon Films by Inductively Coupled Plasma CVD

Structures of Silicon Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition at Room Temperature

The Optoelectronic Properties of Silicon Films Deposited by Inductively Coupled Plasma CVD

Deposition and Growth Mechanism of Low-Temperature Crystalline Silicon Films on Inexpensive Substrates

Low-temperature Deposition of Highly Crystallized Silicon Films on Al-coated Polyethylene Napthalate by Inductively Coupled Plasma CVD

Deposition Of Controllable Preferred Orientation Silicon Films On Glass By Inductively Coupled Plasma Chemical Vapor Deposition

Highly Crystallized Silicon Films Grown on Glass Without Amorphous Incubation Layers by Inductively Coupled Plasma Chemical Vapor Deposition

Preparation of Polycrystalline Silicon Films by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Structural Evolution of Nanocrystalline Silicon Thin Films Synthesized in High-Density, Low-Temperature Reactive Plasmas

Study on Silicon Films Prepared by Inductively Coupled Plasma CVD

Structural Analysis of Polycrystalline Silicon Thin Films Produced by Two Different ICPCVD Approaches

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Chemically Active Plasmas for Deterministic Assembly of Nanocrystalline SiC Film

Deposition and field emission properties of highly crystallized silicon films on aluminum-coated polyethylene napthalate

Effects of Carbon Additions on Crystallinity and Resistivity in Si–C–H Thin Films Deposited by CVDs

Synthesis and Characterization of Crystalline Films on Silicon

Structure and Optical Properties of Si Films Deposited by Inductively Coupled Plasma Cvd at Room Temperature

Crystallization Control of the Incubation Layer in Microcrystalline Silicon Films Deposited by Using Jet-Icpcvd

Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition