Abstract:Power dissipation is a crucial problem as the packing density of transistors increases in modern integrated circuits. Tunnel field-effect transistors (TFETs), which have high energy filtering provided by band-to-band tunneling (BTBT), have been proposed as an alternative electronics architecture to decrease the energy loss in bias operation and to achieve steep switching at room temperature. Very recently, the BTBT behavior has been demonstrated in van der Waals heterostructures by using unintentionally doped semiconductors. The reason of the BTBT formation is attributed to a significant band bending near the heterointerface, resulting in carrier accumulations. In this work, to investigate charge transport in type-III transistors, we adopted the same band-bending concept to fabricate van der Waals BP/MoS2 heterostructures. Through analyzing the temperature dependence of their electrical properties, we carefully ruled out the contribution of metal-semiconductor contact resistances and improved our understanding of carrier injection in 2D type-III transistors. The BP/MoS2 heterostructures showed both negative differential resistance and 1/f2 current fluctuations, strongly demonstrating the BTBT operation. Finally, we also designed a TFET based on this heterostructure with an ionic liquid gate, and this TFET demonstrated an subthreshold slope can successfully surmount the thermal limit of 60 mV/decade. This work improves our understanding of charge transport in such layered heterostructures and helps to improve the energy efficiency of next-generation nanoscale electronics.

A Novel Deep-Impurity-Level Assisted Tunneling Technology for Enhanced Interband Tunneling Probability

A Novel High-Voltage Trench Gate Insulated Gate Bipolar Transistor With Diffusion Remnant Layer

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

High On-State Current P-Type Tunnel Effect Transistor Based on Doping Modulation

Enhanced interband tunneling in two-dimensional tunneling transistors through anisotropic energy dispersion

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor

Modulating Tunneling Width and Energy Window for High-on-current Two-Dimensional Tunnel Field-Effect Transistors

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

A Tunnel-Induced Injection Field-Effect Transistor with Steep Subthreshold Slope and High On-off Current Ratio

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

Control of Electron Tunnelling by Fine Band Engineering of Semiconductor Potential Barriers.

Current Enhanced PNPN Tunnel Field-Effect Transistor with L-shaped Gate

High performance tunnel field-effect transistor by gate and source engineering.

Vertical SnS 2 /si Heterostructure for Tunnel Diodes

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Performance comparison between p-i-n tunneling transistors and conventional MOSFETs