Abstract:Atomic layer deposition (ALD) is used in applications where inorganic material layers with uniform thickness down to the nanometer range are required. For such thicknesses, the growth mode, defining how the material is arranged on the surface during the growth, is of critical importance. In this work, the growth mode of the zirconium tetrachloride∕water and the trimethyl aluminum∕water ALD process on hydrogen-terminated silicon was investigated by combining information on the total amount of material deposited with information on the surface fraction of the material. The total amount of material deposited was measured by Rutherford backscattering, x-ray fluorescence, and inductively coupled plasma–optical emission spectroscopy, and the surface fractions by low-energy ion scattering. Growth mode modeling was made assuming two-dimensional growth or random deposition (RD), with a “shower model” of RD recently developed for ALD. Experimental surface fractions of the ALD-grown zirconium oxide and aluminum oxide films were lower than the surface fractions calculated assuming RD, suggesting the occurrence of island growth. Island growth was confirmed with transmission electron microscopy (TEM) measurements, from which the island size and number of islands per unit surface area could also be estimated. The conclusion of island growth for the aluminum oxide deposition on hydrogen-terminated silicon contradicts earlier observations. In this work, physical aluminum oxide islands were observed in TEM after 15 ALD reaction cycles. Earlier, thicker aluminum oxide layers have been analyzed, where islands have not been observed because they have already coalesced to form a continuous film. The unreactivity of hydrogen-terminated silicon surface towards the ALD reactants, except for reactive defect areas, is proposed as the origin of island growth. Consequently, island growth can be regarded as “undesired surface-selective ALD.”

Island Growth in the Atomic Layer Deposition of Zirconium Oxide and Aluminum Oxide on Hydrogen-Terminated Silicon: Growth Mode Modeling and Transmission Electron Microscopy

Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation

Density Functional Theory Study on Surface Reaction Mechanism of Atomic Layer Deposition of ZrO(2)on Si(100)-2 X 1

Atomic layer deposition of two-dimensional layered zirconium sulfide

Growth Mode Evolution of Hafnium Oxide by Atomic Layer Deposition

Area-Selective Atomic Layer Deposition Using Self-Assembled Monolayer and Scanning Probe Lithography

Growth Behavior Of Hafnium Oxide Film By Atomic Layer Deposition And Its Modulation

Growth Per Cycle in Atomic Layer Deposition: Real Application Examplesof a Theoretical Model

Model Surfaces Produced by Atomic Layer Deposition

On the Mechanism of the Atomic Layer Deposition of Cu Films on Silicon Oxide Surfaces: Activation Using Atomic Hydrogen and Three-Dimensional Growth

Atomic Layer Deposition of Hafnium Oxide on Germanium Substrates

Low-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursors

High-Quality thin SiO2 films grown by atomic layer deposition using tris(dimethylamino)silane (TDMAS) and Ozone

N ew Class of Zr Precursor Containing Boratabenzene Ligand Enabling Highly Conformal Wafer-Scale Zirconium Dioxide Thin Films through Atomic Layer Deposition

Atomic Layer Deposition of Hafnium Oxide from Hafnium Chloride and Water

Ultrathin Sio2 Films Grown by Atomic Layer Deposition Using Tris(Dimethylamino)Silane (tdmas) and Ozone

Area-Selective Atomic Layer Deposition of ZnO by Area Activation Using Electron Beam-Induced Deposition

Growth Behavior of Ir Metal Formed by Atomic Layer Deposition in the Nanopores of Anodic Aluminum Oxide.

Surface reaction mechanisms during atomic layer deposition of zirconium oxide using water, ethanol, and water-ethanol mixture as the oxygen sources

Atomic Layer Deposition Nucleation Dependence on Diamond Surface Termination

Resolving The Evolution Of Atomic Layer-Deposited Thin-Film Growth By Continuous In Situ X-Ray Absorption Spectroscopy