Abstract:Silicon , as the earth-abundant semiconductor, has low cost and good compatibility with mature complementary metal-oxide-semiconductor technology. Therefore, instead of choosing the proper semiconductor with a specific bandgap energy, hyperdoping technique, which can introduce deep-level dopants and intermediate band into silicon, enable silicon to operate in infrared wavebands. Particularly, the hyperdoped silicon with transition metals, having low ionized impurity scatting, makes silicon a promising infrared detection material. In present work, zinc-hyperdoped silicon is fabricated by femtosecond pulsed laser irradiation. The doping concentration of zinc has exceeded 10 19 cm −3 , and even reached 10 22 cm −3 , which is about five orders of magnitude greater than the solid solubility of zinc in crystalline Si. The zinc-hyperdoped silicon shows sub-bandgap absorptance of 87.86 % at 1310 nm. Temperature-dependent Hall effect measurements prove that zinc doping results in acceptor energy level located at 0.520 eV above the valence band maximum. It is worth nothing that, zinc-oxygen related defect state results in donor energy level located at 0.252 eV below the conduction band minimum when lower laser fluence is used, which means the energy level of impurity is altered by the presence of undesignedly doped oxygen atoms, suggesting compound formation between the zinc atoms and oxygen atoms.

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Physical Mechanisms for the Unique Optical Properties of Chalcogen-Hyperdoped Silicon

Tellurium@Selenium core-shell hetero-junction: Facile synthesis, nonlinear optics, and ultrafast photonics applications towards mid-infrared regime

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Fabrication of Black Silicon with Thermostable Infrared Absorption by Femtosecond Laser

Infrared Light Absorption and Emissivity of Silicon Microstructured by Femtosecond Laser in SF6

Direct fabrication of black Si with enhanced infrared transmittance using femtosecond laser irradiation

Femtosecond laser induced microstructure and luminescence changes in oxyfluoride tellurite glasses

Great enhancement of infrared light absorption of silicon surface-structured by femtosecond laser pulses in N2 ambient

Chalcogenide glass based integrated photonics

Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring

Strong Mid-Infrared Absorption and High Crystallinity of Microstructured Silicon Formed by Femtosecond Laser Irradiation in NF3 Atmosphere

Greatly enhanced infrared normal spectral emissivity of microstructured silicon using a femtosecond laser

Optical Properties and Local Structure of Dy3+-doped Chalcogenide and Chalcohalide Glasses

Creating zinc-hyperdoped silicon with modulated conduction type by femtosecond laser irradiation

Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

Separation of Mid-IR Light Trapping and Sulfur-Donor Absorption in Nanosecond-Laser Sulfur-Hyperdoped Silicon: a Way to Spatially- and Spectrally-Engineered Interband IR-Absorption

High Transparent Mid-Infrared Silicon "window" Decorated with Amorphous Photonic Structures Fabricated by Facile Phase Separation

Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures