A Novel Low-Power Readout Structure for Tdi Roic

WG Lu,J Gao,ZJ Chen,J Liu,WT Cui,J Tang,LJ Ji
DOI: https://doi.org/10.1109/icasic.2003.1277618
2003-01-01
Abstract:A novel readout structure called Forward-Backward-Asynchronous-Reset (FBAR) structure is presented in this paper. This readout structure is used in high performance CMOS readout integrated circuits (ROIC). Using asynchronous reset structure can increase the column OPA's smallest settling time without decreasing frame's readout frequency. By increasing smallest settling time, a low-power column OPA with power dissipation=78 μW can satisfy fast readout speed. While in typical synchronous reset structure, the column OPA's power dissipation may exceed 200 μW to meet readout speed. This improvement can save more than 50% power dissipation of the column readout stage. An experiment ROIC chip using FBAR structure has been fabricated with 1.2 μm DPDM n-well CMOS technology. Testing result shows the total active chip power dissipation is 25 mW.
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