Novel Low Power QSBDI Structure for IR ROIC

LIU Dan,LU Wengao,CHEN Zhongjian,JI Lijiu,ZHAO Baoying
DOI: https://doi.org/10.3321/j.issn:0479-8023.2007.05.012
2007-01-01
Abstract:A novel low power Quad-Share Buffered Direct-Injection(QSBDI)readout circuit for large format staring ROIC is proposed.In this circuit,four pixels share one common buffer amplifier.With switches' cooperation,the circuit can achieve ITR(integrate then readout)and IWR(integrate while readout)function.With area of 30μm× 30μm,the capacitor in the pixel is about 0.9pF and 4.2pC charge storage capacity,but the power of single pixel is about 500nW.At the same time,the FPN of the pixel is reduced to order of local mismatch and independent of the format of pixel array.Those characters made QSBDI an outstanding pixel structure for large format 2-D ROIC.An experimental 128×128-pixel ROIC is designed and it will be fabricated with 0.5μm DPTM n-well CMOS process.
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