Abstract:Thin films composed of Ge nanocrystals embedded in amorphous SiO2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional doping from shallow dopants was excluded as a candidate mechanism of hole generation. Instead, the p-type characteristic was attributed to surface state induced hole accumulation in NCs, and the hole conduction was found to be a thermally activated process involving charge hopping from one NC to its nearest neighbor. Theoretical analysis has shown that the density of surface states in Ge-NCs is sufficient to induce adequate holes for measured conductivity. The film conductivity can be improved significantly by post-growth rapid thermal annealing and this effect is explained by a simple thermodynamic model. The impact of impurities on the conduction properties was also studied. Neither compensation nor enhancement in conduction was observed in the Sb and Ga doped Ge-NCs TFs, respectively. This could be attributed to the fact that these impurities are no longer shallow dopants in NCs and are much less likely to be effectively activated. Finally, the photovoltaic effect of heterojunction diodes employing such Ge-NCs TFs was characterized in order to demonstrate its functionality in device implementation.

Electroluminescence and Carrier Transport of SiO2 Film Containing Different Density of Ge Nanocrystals

Effect of Density of Ge Nanocrystals on Violet–blue Photoluminescence of Ge+-implanted SiO2 Film

Voltage-controlled electroluminescence from SiO2 films containing Ge nanocrystals and its mechanism

Photoluminescence of Ge Nanoparticles Embedded in Sio2 Glasses Fabricated by A Sol-Gel Method

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Luminescent Ge Nanocrystallites Embedded In A-Sio2 Films

Different Effect of Nanocrystals on the Electroluminescence and Photoluminescence in Er-doped SiO2 Films

Synthesis of Ge nanocrystals in thermal SiO2 films by Ge+ ion implantation

Optical Properties of the Low-Energy Ge-Implanted and Annealed Sio2 Films

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Dielectric Engineering of Ge Nanocrystal/Sio2 Nanocomposite Thin Films with Ge Ion Implantation: Modeling and Measurement

Electroluminescence from Er-doped GeO 2 nanofilms fabricated by atomic layer deposition on silicon: Effect of annealing temperature on film properties

Electroluminescence from Er-doped GeO2 Nanofilms Fabricated by Atomic Layer Deposition on Silicon: Effect of Annealing Temperature on Film Properties

Visible Photoluminescence from Ge+-Implanted Sio2 Films Thermally Grown on Crystalline Si

ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GE+-IMPLANTED SIO2 FILMS THERMALLY GROWN ON CRYSTALLINE SILICON

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Raman scattering and room-temperature visible photoluminescence from Ge nanocrystals embedded in SiO2 thin films

Structural and Electrical Properties of Laser-Crystallized Nanocrystalline Ge Films and Nanocrystalline Ge/SiNxmultilayers

Electrical Properties of Conductive Ge Nanocrystal Thin Films Fabricated by Low Temperature In-situ Growth

Mixed-ligand-functionalized Silicon-Germanium Alloy Nanocrystals with Improved Carrier Mobilities.

Optical Absorption and Charging Effect in Nano-Crystalline Ge/SiNx Multilayers