Abstract:Single-crystal silicon carbide, as one of the most promising next-generation semiconductor materials, should be polished with atomically smooth and damage-free surface to meet the requirements of semiconductor applications. The research presented in this paper aims to develop an electrical enhanced photocatalysis polishing method for atomic smoothing of Si-face (0001) 4H-SiC wafer based on the powerful oxidability of UV photo-excited hydroxyl radical on nano semiconductor particles. The research identifies the influences of photocatalyst, electron capturer, UV light, voltage and pH value by designing the orthogonal fading experiments of methyl orange and thus develops several slurries for electrical enhanced photocatalysis polishing accordingly. It also demonstrates that photocatalyst, UV light, electron capturer, and acid environment being necessaries for the electrical enhanced photocatalysis polishing process. Electricity can effectively prevent the recombination of electrons and holes generated on the surface of semiconductor particles and therefore enhance the polishing efficiency. Five photocatalysts including 5 nm TiO2, P25, ZnO, CeO2 and ZrO2 have envious selectivity to the UV light. The slurry with P25 as the photocatalyst and H2O2 as electron capturer presents best polishing performance among, which provides a material removal rate of about 1.18 mu m/h and a surface roughness of about Ra 0.0527 nm in an area of 1.0 x 1.0 mu m. Furthermore, it also discusses how the UV light irradiation and electricity promotes the chemical oxidation of hydroxyl radical with SiC by forming "Si-C-O", "Si-O" and "C-O" on SiC surface. The paper concludes that the proposed electrical enhanced photocatalysis polishing is an effective and clean manufacturing method for SiC wafer without rendering toxic chemical effect on environment and human health.

Investigation On Smoothing Silicon Carbide Wafer With A Combined Method Of Mechanical Lapping And Photocatalysis Assisted Chemical Mechanical Polishing

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Development of Electrical Enhanced Photocatalysis Polishing Slurry for Silicon Carbide Wafer

Investigation on Electrical Enhanced Photocatalysis Polishing of Single-Crystal Silicon Carbide Substrates

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Study on material removal mechanism in ultrasonic chemical assisted polishing of silicon carbide

Photocatalysis-Assisted Chemical Mechanical Polishing of SiC Wafer Using a Novel SiO2@TiO2 Core-Shell Composite Nanoparticles Slurry

Photocatalytic assisted chemical mechanical polishing for silicon carbide using developed ceria coated diamond core-shell abrasives

Improved Chemical Mechanical Polishing Performance in 4H-Sic Substrate by Combining Novel Mixed Abrasive Slurry and Photocatalytic Effect

Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Nanosecond Laser Irradiation Assisted Chemical Mechanical Polishing (CMP) Process for Promoting Material Removal of Single Crystal 4H-Sic

Chemical Mechanical Polishing (CMP) of SiC Wafer Using Photo-Catalyst Incorporated Pad

Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis

Chemical Mechanical Polishing of 4H-SiC Wafer with UV-LED Light

Polishing Mechanism Analysis of Silicon Carbide Ceramics Combined Ultrasonic Vibration and Hydroxyl

Investigation on Enhanced Machinability of SiC Ceramics through Photocatalytic Vibration Composite Polishing

Development of Core–shell SiO2@A-TiO2 Abrasives and Novel Photocatalytic Chemical Machinal Polishing for Atomic Surface of Fused Silica

High efficiency polishing of silicon carbide by applying reactive non-aqueous fluids to fixed abrasive pads

Development of core–shell SiO 2 @A-TiO 2 abrasives and novel photocatalytic chemical machinal polishing for atomic surface of fused silica

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face