Abstract:Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage. A good CMP process for Silicon Carbide (SiC) requires a balanced interaction between SiC surface oxidation and the oxide layer removal. The oxidants in the CMP slurry control the surface oxidation efficiency, while the polishing mechanical force comes from the abrasive particles in the CMP slurry and the pad asperity, which is attributed to the unique pad structure and diamond conditioning. To date, to obtain a high-quality as-CMP SiC wafer, the material removal rate (MRR) of SiC is only a few micrometers per hour, which leads to significantly high operation costs. In comparison, conventional Si CMP has the MRR of a few micrometers per minute. To increase the MRR, improving the oxidation efficiency of SiC is essential. The higher oxidation efficiency enables the higher mechanical forces, leading to a higher MRR with better surface quality. However, the disparity on the Si-face and C-face surfaces of 4H- or 6H-SiC wafers greatly increases the CMP design complexity. On the other hand, integrating hybrid energies into the CMP system has proven to be an effective approach to enhance oxidation efficiency. In this review paper, the SiC wafering steps and their purposes are discussed. A comparison among the three configurations of SiC CMP currently used in the industry is made. Moreover, recent advances in CMP and hybrid CMP technologies, such as Tribo-CMP, electro-CMP (ECMP), Fenton-ECMP, ultrasonic-ECMP, photocatalytic CMP (PCMP), sulfate-PCMP, gas-PCMP and Fenton-PCMP are reviewed, with emphasis on their oxidation behaviors and polishing performance. Finally, we raise the importance of post-CMP cleaning and make a summary of the various SiC CMP technologies discussed in this work.

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Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis

Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

Investigation on Enhanced Machinability of SiC Ceramics through Photocatalytic Vibration Composite Polishing

High efficiency polishing of silicon carbide by applying reactive non-aqueous fluids to fixed abrasive pads

Investigation on Electrical Enhanced Photocatalysis Polishing of Single-Crystal Silicon Carbide Substrates

An experimental investigation of scan trajectory into the underwater femtosecond laser polishing SiC ceramic

Photocatalysis-Assisted Chemical Mechanical Polishing of SiC Wafer Using a Novel SiO2@TiO2 Core-Shell Composite Nanoparticles Slurry

Photocatalytic assisted chemical mechanical polishing for silicon carbide using developed ceria coated diamond core-shell abrasives

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Polishing single-crystal silicon carbide with porous structure diamond and graphene-TiO2 slurries

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Investigation on the underwater femtosecond laser polishing SiC ceramic

Influence of surface morphology and processing parameters on polishing of silicon carbide ceramics using femtosecond laser pulses

Chemical Mechanical Polishing for Monocrystal SiC Assisted by the Heterogeneous Sono-Fenton Oxidation

Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Investigation on ultrasonic vibration-assisted femtosecond laser polishing of C/SiC composites