Abstract:Classes of input-reflectionless wideband bandpass filters (BPFs) and balun BPF with quasi-elliptic-type (QET) responses are reported. They consist of two signal-transmission parts in multilayered diplexer-based topologies, as follows: 1) a BPF channel shaped by a two-/three-port reflective-type BPF/balun on a microstrip-to-microstrip vertical transition and 2) an input-absorptive bandstop filter (BSF) channel built with a shunt resistively terminated lowpass filter (LPF) that is composed of hybrid microstrip sections and open-circuit-ended microstrip stubs. Two real-frequency out-of-band transmission zeros (TZs) are generated in these RF filtering devices using a cascaded short-circuit-ended two-section microstrip line and two shunt open-circuit-ended half-wavelength microstrip lines, respectively. Using a higher order LPF network, enhanced passband amplitude flatness and improved stopband power absorption ratio levels for the devised BPFs are attained. As design examples, two third-order BPFs with a shunt resistively terminated microstrip T-junction and a $pi $ -shape structure, respectively, are first provided. Afterward, a higher order BPF based on two cascaded replicas of a third-order BPF unit is designed to show highly increased stopband power attenuation levels and enhanced power absorption ratio profile within the stopband-to-passband transitions. Subsequently, their application to an input-absorptive QET fourth-order wideband balun BPF is presented. The operational principles of these BPFs and balun are detailed by the developed design procedures, in which their associated impedance-type design parameters are synthetically determined. As practical validation, four microstrip prototypes corresponding to three 2-GHz wideband BPFs and one 1-GHz broadband balun BPF are manufactured and tested. These input-reflectionless wideband filtering components experimentally feature the desired merits in terms of QET responses, enhanced passband amplitude flatness, and improved stopband power absorption ratio levels.

Wideband Filtering Balun with Wide Stopband and Imbalance Compensation Using Hybrid DGS with Float Strip-Line

Compact dual-mode dual-band balun filter using double-sided parallel-strip line

Compact CMOS Baluns for the 4–10 GHz Band Applications

A defected-ground coupled line section with two shorts for wideband balun application

Three-solenoid Windings Transformer Baluns on CMOS-grade Silicon Substrate

UWB Bandpass Filter with Wide Notch Using Hybrid Microstrip/cpw Scheme, Defected Microstrip Array, and Defected Corner Scheme

Compact Wideband and Variable Impedance Transformation Ratio Balun for Folded Dipole

Synthesis and Design of LTCC Filtering Balun With Wide Stopband

A high gain, wide band (2–10 GHz), and low noise active balun merged folded mixer for the full-band UWB application

Dual-Mode Dual-Band DR Balun Filter Using Suspended Stripline Feeding Structure

Differential Signal Propagation in Spoof Plasmonic Structure and Its Application in Microwave Filtering Balun

A UWB Mixer with a Balanced Wide Band Active Balun Using Crossing Centertaped Inductor

High-selectivity wideband bandpass filter based on quintuple-mode stub-loaded resonator and defected ground structures

Bandpass filter with wide stopband using broadsidecoupled microstrip T-stub/DGS cell

Modified Broadband Ruthroff-Type Transmission Line Transformer Balun for Isolation-Enhanced Passive Mixer Design

Design of compact balanced filters with wide DM upper stopband and CM rejection band based on semi‐circular patch

A Broadband Monolithic Balun Based on 0.13/spl mu/m CMOS Process Using Planar-Spiral Transformers

Multilayered Input-Reflectionless Quasi-Elliptic-Type Wideband Bandpass Filtering Devices on Diplexer-Based Structures

A Broadband Monolithic Balun Based on 0.13μ CMOS m Process Using Planar-Spiral Transformers

Analysis and Design of Broadband Balance-Compensated Transformer Baluns for Silicon-Based Millimeter-Wave Circuits

Planar Compact Dual-Band Balun with Flexible Frequency Ratios