Preparation method of Cu/Ta nanometer multilayer film with crystal particle dimension difference

Ping Huang,Fei Wang,Kewei Xu,Ming Xu
2010-01-01
Abstract:The invention discloses a method for preparing a metal nanometer multilayer film with different crystal particle dimension by adopting magnetic control sputtering technology; the Cu/Ta nanometer multilayer film is alternately composed of a Cu layer and a Ta layer, and the ratio of the thickness of two layers is 1:1, the modulated wave length is 5-140nm, and the total thickness is 1mum; wherein the size of the Cu layer crystal particle dimension is equivalent to the thickness of the film layer, and the size of the Ta layer crystal particle dimension is 1/4 of the thickness of the film, and the Cu layer and the Ta layer have obvious crystal particle dimension difference; the hardness of the Cu/Ta nanometer multilayer film is increased by 35 percent compared by the traditional multilayer film material, the stretching extensibility exceeds 5 percent and is far more than that of the traditional multilayer film material. The hardness and the plasticity of the Cu/Ta nanometer multilayer film are optimized on the mechanical property; the metal nanometer multilayer film with different crystal particle dimension can be widely applied to very-large-scale integration circuit devices, protective coatings and functional coatings of various precise instruments and the like.
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