Tin/Ti Multilayer Films Synthesized by Mid-Frequency Dual-Magnetron Sputtering

Yu Xiang,Wang Chengbiao,Liu Yang,Yu Deyang

DOI: https://doi.org/10.3321/j.issn:0412-1961.2006.06.018

IF: 1.797

2006-01-01

ACTA METALLURGICA SINICA

Abstract:A series of Ti-based multilayered films were deposited using a new mid-frequency dual-magnetron sputtering system. The influences of Ti buffer layer on the film hardness and adhesion were investigated. The forming mechanism of macro-particles and caves was analyzed, and then the orthogonal design and variance analysis were used to discuss the influences of the target currents, the pressures of working gases and the substrate bias voltages on the densities of the surface defects, and the process parameters were optimized accordingly. The results show that the target current has the most important influence on the defect density, and the effects of the pressures and the substrate bias voltages decrease in turn; in the condition of the target current of 20 A, the gases pressure of 0.31 Pa, the bias voltages in a range of -160- -300 V and the thickness of Ti buffer layers, x=0.12 mu m, the high-quality TiN/Ti multilayer film is obtained, whose Vickers microhardness HV0.2 (N) is 2250, film-substrate adhesion (critical load L-c) is 48 N, and surface defect density is 58 mm(-2).