Charge Transport and Thermoelectric Properties of Ge-Doped Famatinites Cu3Sb1−yGeyS4

Pi Ji-Hee,Lee Go-Eun,Kim Il-Ho

DOI: https://doi.org/10.1007/s13391-021-00298-5

IF: 3.151

2021-01-01

Electronic Materials Letters

Abstract:Ge-doped famatinites Cu3Sb1−yGeyS4 (0 ≤ y ≤ 0.1) were prepared by mechanical alloying and hot pressing. The phase transition, microstructure, charge transport properties and thermoelectric properties were examined in accordance with the Ge content. The famatinites were maintained as a single phase with a tetragonal structure at temperatures below their melting point without secondary phases. The melting points of Cu3SbS4 and Cu3Sb0.92Ge0.08S4 were 817 and 819 K, respectively. The hot-pressed specimens exhibited high relative densities of 98.3–99.5%. The a-axis and c-axis were decreased from 0.5386 to 0.5378 nm and from 1.0744 to 1.0719 nm, respectively, by doping Sb sites with Ge. Both intrinsic and Ge-doped famatinites exhibited positive Hall and Seebeck coefficients. The carrier concentration and mobility of Cu3SbS4 were 2.2 × 1018 cm−3 and 1.6 cm2  V−1 s−1, but those of Ge-doped specimens increased to (0.4–3.3) × 1019 cm−3 and 29–71 cm2V−1 s−1, respectively. Cu3SbS4 exhibited non-degenerate semiconductor characteristics and demonstrated a dimensionless figure of merit, ZT, of 0.1 at 623 K owing to a power factor of 0.14 m Wm−1 K−2 and a thermal conductivity of 0.62 Wm−1 K−1. However, the Ge-doped specimens exhibited degenerate semiconductor behaviors, and Cu3Sb0.92Ge0.08S4 exhibited the highest ZT of 0.55 at 623 K owing to a power factor of 0.64 m W m−1 K−2 and a thermal conductivity of 0.72 Wm−1 K−1.