Thermoelectric performance of famatinites double-doped with Ge and In

Bong-Ki Hong,Hui Su Yun,Il-Ho Kim
DOI: https://doi.org/10.1007/s40042-024-01053-3
2024-03-19
Journal of the Korean Physical Society
Abstract:Double-doped famatinites Cu 3 Sb 1- x-y Ge x In y S 4 were prepared in this study, and phase/microstructural analyses and thermoelectric performance were examined for each Ge and In doping level. A tetragonal famatinite phase could be synthesized by mechanical alloying; however, a secondary phase of CuS was produced in the specimen Cu 3 Sb 0.84 Ge 0.08 In 0.08 S 4 . With Ge and In double doping, the a -axis of the famatinite lattice expanded slightly, but the c -axis decreased significantly. Except for Cu 3 Sb 0.92 Ge 0.02 In 0.06 S 4 , the electrical conductivity exhibited degenerate semiconductor behavior. As the doping level increased, the electrical conductivity increased owing to an increase in the carrier (hole) concentration. In contrast, the Seebeck coefficient decreased with increasing doping content. Power factor (PF) was enhanced with increasing temperature, and Cu 3 Sb 0.88 Ge 0.06 In 0.06 S 4 demonstrated a maximum PF of 0.73 mW m −1 K −2 at 623 K. The lattice thermal conductivity decreased with increasing temperature, and thus the thermal conductivity was minimum (0.47–0.92 W m −1 K −1 ) at 623 K. However, the electronic thermal conductivity had minimal temperature dependence but was proportional to the doping concentrations of Ge and In. Consequently, the dimensionless figure of merit (ZT) improved at high temperatures, and Cu 3 Sb 0.88 Ge 0.06 In 0.06 S 4 achieved the highest ZT of 0.65 at 623 K.
physics, multidisciplinary
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