Abstract:In-memory computing (IMC) paradigm has attracted extensive attention for future electronics to overcome the bottleneck and memory wall problem in the von Neumann systems. Nonvolatile logic based on resistive random-access memory (RRAM) is a promising route to implement such architecture. This paper presents the circuits and computing methodology to implement functionally complete Boolean logic and arithmetic block co-design using the CMOS-compatible 2-transistor-2-RRAM (2T2R) structure with reversely connected bipolar RRAM pairs. Arbitrary logic functions for two and multiple operands could be implemented in one-step operation, after which the computation results are in situ stored as the nonvolatile resistive states of the RRAM. In this design, the logic functionality is achieved by simply applying external operational voltages and/or corresponding RRAM initial states to the proposed 2T2R units. Compared with the traditional CMOS designs where the circuit topologies change with logic functions, the proposed 2T2R chain has a universal design with repeated unit blocks, independent of the logic functions. The highly regular and symmetric circuit structure makes it easy for design, integration, and fabrication. The proposed computing scheme/structure is intrinsic, clean, and efficient for IMC applications and presents superior performance in speed and area. The result of the study could build a technology cell library that can be potentially used as input to a technology-mapping algorithm for processing in-memory applications.

Memristive Combinational And Sequential Logic For In-Memory Computing

Nonvolatile memristive logic: a road to in-memory computing

Functional Demonstration of a Memristive Arithmetic Logic Unit (memalu) for In‐Memory Computing

Reconfigurable Nonvolatile Boolean Logic with One-Transistor-two-memristor for In-Memory Computing

Reprogrammable Logic in Memristive Crossbar for In-Memory Computing

Boolean and Sequential Logic in a One‐Memristor‐One‐Resistor (1M1R) Structure for In‐Memory Computing

Reconfigurable Stateful Logic Circuit with Cu/CuI/Pt Memristors for In-Memory Computing

Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications

Nonvolatile Logic‐in‐Memory Computing Based on Solution‐Processed CuI Memristor

Easily Cascaded Memristor-CMOS Hybrid Circuit for High-Efficiency Boolean Logic Implementation

Functionally Complete Boolean Logic and Adder Design Based on 2T2R RRAMs for Post-CMOS In-Memory Computing

Reconfigurable and Efficient Implementation of 16 Boolean Logics and Full‐Adder Functions with Memristor Crossbar for Beyond Von Neumann In‐Memory Computing

Reconfigurable Logic in Nanosecond Cu/GeTe/TiN Filamentary Memristors for Energy-Efficient In-Memory Computing

Efficient 16 Boolean Logic and Arithmetic Based on Bipolar Oxide Memristors

Highly Efficient Reconfigurable Stateful Logic Operations Based on CuI Memristor-Only Arrays Prepared with a Solution-Based Process

Efficient Parallel Multi‐Bit Logic‐in‐Memory Based on a Ultrafast Ferroelectric Tunnel Junction Memristor

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

Nonvolatile Memristor As a New Platform for Non-Von Neumann Computing

Logic Circuit and Memory Design for In-Memory Computing Applications Using Bipolar RRAMs

Implementation Of Functionally Complete Boolean Logic And 8-Bit Adder In Cmos Compatible 1t1r Rrams For In-Memory Computing

A Hybrid Memristor-Cmos XOR Gate for Nonvolatile Logic Computation