Abstract:Bilayer graphene has attracted wide attention due to its unique band structure and bandgap tunability under specific (Bernal or AB) stacking order. However, it remains challenging to tailor the stacking order and to simultaneously produce large-scale and high-quality bilayer graphene. This work introduces a fast and reliable method of growing high-quality Bernal stacked large-area (>3 in. X 3 in.) bilayer graphene film or trilayer graphene domains (30 pm x 30 mu m) using chemical vapor deposition (CVD) on engineered Cu-Ni alloy catalyst films. The AB stacking order is evaluated by Raman spectra, electron diffraction pattern, and dual gate field-effect-transistor (FET) measurements, and a near-perfect AB stacked bilayer graphene coverage (>98%) is obtained. The synthesized bilayer and trilayer graphene with Bernal stacking exhibit electron mobility as high as 3450 cm(2)/(V.s)and 1500 cm(2)/(V.s), respectively, indicating comparable quality with respect to exfoliated bilayer and trilayer graphene. The record high (for CVD bilayer graphene) ON to OFF current ratios (up to 15) obtained for a large number (>50) of dual-gated FETs fabricated at random across the large-area bilayer graphene film also corroborates the success of our synthesis technique. Moreover, through catalyst engineering, growth optimization, and element analysis of catalyst, it is shown that achieving surface catalytic graphene growth mode and precise control of surface carbon concentration are key factors determining the growth of high quality and large area Bernal stacked bilayer graphene on Cu-Ni alloy. This discovery can not only open up new vistas for large-scale electronic and photonic device applications of graphene but also facilitate exploration of novel heterostructures formed with emerging beyond graphene two-dimensional atomic crystals.

Centimeter-scale, Single-Crystalline, AB-stacked Bilayer Graphene on Insulating Substrates

Direct synthesis of single-crystal bilayer graphene on various dielectric substrates

Fast synthesis of large-area bilayer graphene film on Cu

Layer-by-Layer AB-Stacked Bilayer Graphene Growth Through an Asymmetric Oxygen Gateway

Large Scale Synthesis of Bi-layer Graphene in Strongly Coupled Stacking Order

Insulating SiO2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Controlled Growth of Bilayer Graphene on Space-Confined Cu Substrates

Interlayer Epitaxy of Wafer-Scale High-Quality Uniform AB-stacked Bilayer Graphene Films on Liquid Pt3Si/solid Pt.

Insulating SiO 2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Crystalline Bilayer Graphene with Preferential Stacking from Ni-Cu Gradient Alloy.

Synthesis Of Large-Area Single-Crystal Graphene

Site-Selective Synthesis of Bilayer Graphene on Cu Substrates Using Titanium as a Carbon Diffusion Barrier

High-quality Bilayer Graphene Grown on Softened Copper Foils by Atmospheric Pressure Chemical Vapor Deposition

Large-area Single-Crystal AB-bilayer and ABA-trilayer Graphene Grown on a Cu/Ni(111) Foil

Sizable Band Gap in Epitaxial Bilayer Graphene Induced by Silicene Intercalation.

Towards Growth of Pure AB-stacked Bilayer Graphene Single Crystals

Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene.

Synchronous growth of 30°-twisted bilayer graphene domains with millimeter scale

Artificial Stacking for Large Twisted Bilayer Graphene Domain with Van Hove Singularity

From regular arrays of liquid metal nano-islands to single crystalline biatomic-layer gallium film: Molecular dynamics and first principle study

Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene Using Chemical Vapor Deposition