Abstract:Chemical vapour deposition of carbon-containing precursors on metal substrates is currently the most promising route for the scalable synthesis of large-area, high-quality graphene films1. However, there are usually some imperfections present in the resulting films: grain boundaries, regions with additional layers (adlayers), and wrinkles or folds, all of which can degrade the performance of graphene in various applications2,3,4,5,6,7. There have been numerous studies on ways to eliminate grain boundaries8,9 and adlayers10,11,12, but graphene folds have been less investigated. Here we explore the wrinkling/folding process for graphene films grown from an ethylene precursor on single-crystal Cu–Ni(111) foils. We identify a critical growth temperature (1,030 kelvin) above which folds will naturally form during the subsequent cooling process. Specifically, the compressive stress that builds up owing to thermal contraction during cooling is released by the abrupt onset of step bunching in the foil at about 1,030 kelvin, triggering the formation of graphene folds perpendicular to the step edge direction. By restricting the initial growth temperature to between 1,000 kelvin and 1,030 kelvin, we can produce large areas of single-crystal monolayer graphene films that are high-quality and fold-free. The resulting films show highly uniform transport properties: field-effect transistors prepared from these films exhibit average room-temperature carrier mobilities of around (7.0 ± 1.0) × 103 centimetres squared per volt per second for both holes and electrons. The process is also scalable, permitting simultaneous growth of graphene of the same quality on multiple foils stacked in parallel. After electrochemical transfer of the graphene films from the foils, the foils themselves can be reused essentially indefinitely for further graphene growth.

Large-area Single-Crystal AB-bilayer and ABA-trilayer Graphene Grown on a Cu/Ni(111) Foil

Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene Using Chemical Vapor Deposition

Towards Growth of Pure AB-stacked Bilayer Graphene Single Crystals

Fast synthesis of large-area bilayer graphene film on Cu

Growth mechanism and controlled synthesis of AB-stacked bilayer graphene on Cu-Ni alloy foils.

Controlled Growth of Bilayer Graphene on Space-Confined Cu Substrates

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Centimeter-scale, Single-Crystalline, AB-stacked Bilayer Graphene on Insulating Substrates

Graphene: Copper‐Vapor‐Assisted Rapid Synthesis of Large AB‐Stacked Bilayer Graphene Domains on Cu‐Ni Alloy (small 15/2016)

Crystalline Bilayer Graphene with Preferential Stacking from Ni-Cu Gradient Alloy.

Synthesis Of Large-Area Single-Crystal Graphene

Rapid Growth Of Large-Area Single-Crystal Graphene Film By Seamless Stitching Using Resolidified Copper Foil On A Molybdenum Substrate

Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

Single-crystal, large-area, fold-free monolayer graphene

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Layer-controlled and wafer-scale synthesis of uniform and high-quality graphene films on a polycrystalline nickel catalyst

Atomistic Mechanisms for Bilayer Growth of Graphene on Metal Substrates

A Wrinkling and Etching-Assisted Regrowth Strategy for Large-Area Bilayer Graphene Preparation on Cu

Epitaxial (111) Films of Cu, Ni, and Cu$_xNi$_y$ on α-Al$_2$O$_3$(0001) for Graphene Growth by Chemical Vapor Deposition

Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene.

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films