Abstract:Cryogenic deep reactive ion etching (Cryo DRIE) of silicon has become an enticing but challenging process utilized in front-end fabrication for the semiconductor industry. This method, compared to the Bosch process, yields vertical etch profiles with smoother sidewalls not subjected to scalloping, which are desired for many microelectromechanical systems (MEMS) applications. Smoother sidewalls enhance electrical contact by ensuring more conformal and uniform sidewall coverage, thereby increasing the effective contact area without altering contact dimensions. The versatility of the Cryo DRIE process allows for customization of the etch profiles by adjusting key process parameters such as table temperature, O2 percentage of the total gas flow rate (O2 + SF6), RF bias power, and process pressure. In this work, we undertake a comprehensive study of the effects of Cryo DRIE process parameters on the trench profiles in the structures used to define cantilevers in MEMS devices. Experiments were performed with an Oxford PlasmaPro 100 Estrelas ICP-RIE system using positive photoresist SPR-955 as a mask material. Our findings demonstrate significant influences on the sidewall angle, etch rate, and trench shape due to these parameter modifications. Varying the table temperature between -80°C and -120°C under a constant process pressure of 10 mTorr changes the etch rate from 3 to 4 μm/min, while sidewall angle changes by ~2°, from positive ( 90° relative to the Si surface) tapering. Altering the O2 flow rate with constant SF6 flow results in a notable 10° shift in sidewall tapering. Furthermore, SPR-955 photoresist masks provide selectivity of 46:1 with respect to Si and facilitates the fabrication of MEMS devices with precise dimension control ranging from 1 to 100 μm for etching depths up to 42 μm using Cryo DRIE. Understanding the influence of each parameter is crucial for optimizing MEMS device fabrication.

Cryogenic Etching of Porous Material

Recent Progresses in Material Fabrication and Modification by Cold Plasma Technique

Pseudo‐Wet Plasma Mechanism Enabling High‐Throughput Dry Etching of SiO2 by Cryogenic‐Assisted Surface Reactions

Cryogenic DRIE Processes for High-Precision Silicon Etching in MEMS Applications

Micro Etching Method Inside Microchannels

Ion Bombardment As Dominant Factor in Plasma Cryo-Etching for High Aspect Ratio Silicon Structures

Flow-restricted Etching Method on Isotropic Substrates and Its Mechanism

Numerical study of aperture shape effects in deep cryogenic etching of silicon

Plasma Cyro-etching of High Aspect Ratio Silicon Crystal Structures

Investigation of A Plasma-Etching Process That Uses A Porous Dielectric Template

Fabrication of Nano-Aperture Hollow Tip Array for Microplasma Etching

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Plasma etch processing of advanced ferroelectric devices

Development of an atmospheric pressure air microplasma jet for the selective etching of parylene-C film

A novel approach for bulk micromachining of 4H-SiC by tool-based electrolytic plasma etching in HF-free aqueous solution

Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns

Fabrication and Performance Optimization of the Microplasma Reactor with Composite Dielectrics

Plasma Induced Damage Reduction of Ultra Low-k Dielectric by Using Source Pulsed Plasma Etching for Next BEOL Interconnect Manufacturing

Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size

SF6 Optimized O2 Plasma Etching of Parylene C

Microstructural characterization and inductively coupled plasma-reactive ion etching resistance of Y2O3–Y4Al2O9 composite under CF4/Ar/O2 mixed gas conditions