Dopants and Grain Boundary Effects in Monolayer MoS2: a First-Principles Study.

Xiaoqian Qiu,Yiren Wang,Yong Jiang

DOI: https://doi.org/10.1039/d1cp00156f

2021-01-01

Abstract:The structural, electronic and magnetic properties of large area chemical vapor deposited monolayer MoS2 rely significantly on the presence of grain boundaries (GBs) and defects.

What problem does this paper attempt to address?

Atomistic Dynamics of Sulfur-Deficient High-Symmetry Grain Boundaries in Molybdenum Disulfide

Jinhua Hong,Yanlei Wang,Anle Wang,Danhui Lv,Chuanhong Jin,Zhiping Xu,Matt I. J. Probert,Jun Yuan,Ze Zhang

DOI: https://doi.org/10.1039/c7nr02941a

IF: 6.7

2017-01-01

Nanoscale

Abstract:As a common type of structural defect, grain boundaries play an important role in tailoring the physical and chemical properties of bulk crystals and their 2D counterparts such as graphene and MoS2.
All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of Mos2/Graphene Heterostructures

Jianping Shi,Mengxi Liu,Jinxiu Wen,Xibiao Ren,Xiebo Zhou,Qingqing Ji,Donglin Ma,Yu Zhang,Chuanhong Jin,Huanjun Chen,Shaozhi Deng,Ningsheng Xu,Zhongfan Liu,Yanfeng Zhang

DOI: https://doi.org/10.1002/adma.201503342

IF: 29.4

2015-01-01

Advanced Materials

Abstract:A facile all-chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing the direct construction of MoS2/Gr vertical heterostructures on Au foils. A weak n-doping effect and an intrinsic bandgap of MoS2 are obtained from MoS2/Gr/Au via scanning tunneling microscopy and spectroscopy characterization. The exciton binding energy is accurately deduced by combining photoluminescence measurements.
Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS 2(1- x ) Se 2 x Alloy

Dan-Hui Lü,Dan-Cheng Zhu,Chuan-Hong Jin

DOI: https://doi.org/10.3866/PKU.WHXB201705123

2017-01-01

Acta Physico-Chimica Sinica

Abstract:We report a microscopic study on the process for the substitution of selenium into monolayer molybdenum disulfide via a joint CVD-STEM characterization. Results from quantitative and statistic STEM reveal that the concentration of Se atoms in grain boundaries is much higher than that in intra-domains of monolayer MoS2(1-x) Se-2x alloy. In-depth analysis finds that Se atoms are enriched in the distorted regions due to presence of dislocation cores on the grain boundary, which can be further understood by considering the difference of chemical reactivity for doping reaction in different types of grain boundaries with different symmetry and different misorientation angles. Our results pave the way towards the controlled growth of alloyed two-dimensional transition metal dichalcogenide materials with a high precision, and their further applications.
Grain Boundary and Misorientation Angle-Dependent Thermal Transport in Single-Layer MoS2.

Ke Xu,Ting Liang,Zhisen Zhang,Xuezheng Cao,Meng Han,Ning Wei,Jianyang Wu

DOI: https://doi.org/10.1039/d1nr05113j

IF: 6.7

2022-01-01

Nanoscale

Abstract:Grain boundaries (GBs) are inevitable defects in large-area MoS2 samples but they play a key role in their properties, however, the influence of grain misorientation on thermal transport has largely remained unknown. Here, the critical role of misorientation angle in thermal transport characteristics across 5|7 polar dislocation-dominated GBs in monolayer MoS2 is explored using nonequilibrium molecular dynamics simulations. Results show that thermal transport characteristics of defective GBs are greatly dictated by the misorientation angle, with "U"-shaped thermal conductance as misorientation angle varying from around 5.06-52.26°, as well as by GB energy, 5|7 dislocation type and the grain size. Such unique thermal transport across GBs is primarily attributed to rising phonon-boundary softening and scattering with increasing dislocation density at GBs or GB energy, as well as an increase in localized phonon modes. The study establishes the fundamental relationship between GB and the thermal properties of single-layer MoS2 and highlights the vital role of GBs in designing efficient thermoelectric and thermal management transition metal dichalcogenides.
The Effects of Nonmetal Dopants on the Electronic, Optical, and Catalytic Performances of Monolayer WSe2 by a First-Principles Study

S. Lu,C. Li,Y. F. Zhao,H. H. Li,Y. Y. Gong,L. Y. Niu,X. J. Liu,T. Wang

DOI: https://doi.org/10.1039/c6ra15697e

IF: 4.036

2016-01-01

RSC Advances

Abstract:Doping modifies the electronic, optical, and catalytic behavior of materials through the newly formed chemical bonds and the localized electrons.
Formation of Defects and Impurities in MoSx and Their Effect on Electronic Properties

Yifan Nie,Ravi Agarwal,Sumeet C. Pandey,Gurtej S. Sandhu

DOI: https://doi.org/10.1116/1.5090237

2019-01-01

Abstract:The authors investigate the thermodynamic and electronic properties of few- and monolayer MoS2 using density functional theory. They calculate the formation energies of S vacancies and the doping effect of C and O under various chemical environments which are commonly observed during MoS2 deposition. The results show that in the oxidizing condition, O readily gets incorporated into the MoS2 layer and assists in C doping. They analyze the bandgap and density of states of MoS2 at different concentrations of defect. They find that the bandgap decreases as the defect concentration increases, wherein the ordering of S vacancies has a more significant influence than that of the other two defects. The S vacancy and C dopants generate deep acceptor gap states within the bandgap of MoS2, while O dopant states are delocalized. They also observe that the carbon dopants form penetrative dimers, which lead to shallow acceptor states. This work contributes to the understanding of defect/impurity incorporation during deposition and prediction of electronic behavior of deposited low-quality MoS2 materials.
Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Sina Najmaei,Zheng Liu,Wu Zhou,Xiaolong Zou,Gang Shi,Sidong Lei,Boris I. Yakobson,Juan-Carlos Idrobo,Pulickel M. Ajayan,Jun Lou

DOI: https://doi.org/10.1038/nmat3673

2013-01-14

Abstract:Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area single- and few-layered films. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined and first-principles calculations are applied to investigate their energy landscape. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. The uniformity in thickness, large grain sizes, and excellent electrical performance of these materials signify the high quality and scalable synthesis of the molybdenum disulfide atomic layers.

Materials Science
Doping MoS2 Monolayer with Nonmetal Atoms to Tune Its Electronic and Magnetic Properties, and Chemical Activity: a Computational Study

Xin Wen,Shansheng Yu,Yongcheng Wang,Yuejie Liu,Hongxia Wang,Jingxiang Zhao

DOI: https://doi.org/10.1039/c9nj00466a

IF: 3.3

2019-01-01

New Journal of Chemistry

Abstract:The introduction of heteroatom into MoS2 nanosheet can effectively tune the electronic properties and enhance its chemical reactivity towards small molecules, thus greatly widening their applications.
Revealing the Grain Boundary Formation Mechanism and Kinetics During Polycrystalline MoS2 Growth.

Shuai Chen,Junfeng Gao,Bharathi M. Srinivasan,Gang Zhang,Ming Yang,Jianwei Cha,Shijie Wang,Dongzhi Chi,Yong-Wei Zhang

DOI: https://doi.org/10.1021/acsami.9b15654

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Controllable synthesis of MoS2 with desired grain morphology via chemical vapor deposition (CVD) or physical vapor deposition (PVD) remains a challenge. Hence, it is important to understand polycrystalline growth of MoS2 and further provide guidelines for its CVD/PVD growth. Here, we formulate a kinetic Monte Carlo (kMC) model aiming at predicting the grain boundary (GB) formation in the CVD/PVD growth of polycrystalline MoS2. In the kMC model, the grain growth is via kink nucleation and propagation, whose energetic parameters and initial nucleus details are either from first-principles calculations or from experiments. Using the kMC model, we perform extensive simulations to predict the GB formation by using two, three, four, and five initial nuclei and compare the simulation results with previous experimental results. The obtained GB morphologies are in an excellent agreement with those experimental results. These agreements suggest that the proposed kMC model can correctly capture the mechanism and kinetics of GB formation. In particular, we reveal that the formation of smooth/rough GB is dictated by the two growth vectors for the kink propagation at the two associated grain edges, which is validated by our high-resolution scanning transmission electron microscopy images for PVD growth of MoS2 grains. Besides, we have made predictions beyond reproducing experimental observations, including the growth with artificially designed nuclei, the morphology transformation by tuning the Mo and S sources, and the formation of high-quality single-crystalline monolayer MoS2 by using single-crystalline substrates with vicinal steps. Our kMC model may serve as a powerful predictive tool for the CVD/PVD growth of monolayer MoS2 with desired GB configurations.
Impact of Grain Boundaries on the Electronic Properties and Schottky Barrier Height of MoS 2 @Au Heterojunctions

Viacheslav Sorkin,Hangbo Zhou,Zhi Gen Yu,Kah-Wee Ang,Yong-Wei Zhang

DOI: https://doi.org/10.1039/d4cp03686g

IF: 3.3

2024-12-04

Physical Chemistry Chemical Physics

Abstract:Using density functional theory (DFT) calculations we thoroughly explored the influence of grain boundaries (GBs) in monolayer MoS2 composed of S-polar (S5|7), Mo-polar (Mo5|7), and (4|8) edge dislocation, as well as edge dislocation-double S vacancy complex (S4|6), and dislocation-double S interstitial complex (S6|8), respectively, on the electronic properties of MoS2 and the Schottky barrier height (SBH) at MoS2@Au heterojunctions. Our findings demonstrate that GBs formed by edge dislocations can significantly reduce the SBH compared to defect-free MoS2, with the strongest effect for zigzag (4|8) GBs (-20% reduction) and the weakest for armchair (5|7) GBs (-10% reduction). In addition, a larger tilt angle in the GBs leads to a more pronounced decrease in the SBH, suggesting that the modulation of SBH at the MoS2@Au heterostructure and analogous systems can be accomplished by GB engineering. Our findings also suggest that planar defects with high mobility in MoS2 may contribute to the memory switching effect observed in MoS2-based memtransistors and the reduction caused by the presence of planar defects can partially contribute to the discrepancy observed between experimental measurements and theoretical SBH predictions at the MoS2@Au heterojunction.

chemistry, physical,physics, atomic, molecular & chemical
Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide

Arend M. van der Zande,Pinshane Y. Huang,Daniel A. Chenet,Timothy C. Berkelbach,Youmeng You,Gwan-Hyoung Lee,Tony F. Heinz,David R. Reichman,David A. Muller,James C. Hone

DOI: https://doi.org/10.1038/nmat3633

2013-01-10

Abstract:Recent progress in large-area synthesis of monolayer molybdenum disulfide, a new two-dimensional direct-bandgap semiconductor, is paving the way for applications in atomically thin electronics. Little is known, however, about the microstructure of this material. Here we have refined chemical vapor deposition synthesis to grow highly crystalline islands of monolayer molybdenum disulfide up to 120 um in size with optical and electrical properties comparable or superior to exfoliated samples. Using transmission electron microscopy, we correlate lattice orientation, edge morphology, and crystallinity with island shape to demonstrate that triangular islands are single crystals. The crystals merge to form faceted tilt and mirror boundaries that are stitched together by lines of 8- and 4- membered rings. Density functional theory reveals localized mid-gap states arising from these 8-4 defects. We find that mirror boundaries cause strong photoluminescence quenching while tilt boundaries cause strong enhancement. In contrast, the boundaries only slightly increase the measured in-plane electrical conductivity.

Materials Science,Mesoscale and Nanoscale Physics
Magnetic Properties of Mn-doped Monolayer MoS2

Bei Gao,Can Huang,Feng Zhu,Chun-Lan Ma,Yan Zhu

DOI: https://doi.org/10.1016/j.physleta.2021.127636

IF: 2.707

2021-01-01

Physics Letters A

Abstract:We use first-principles method to investigate the crystal structure, electronic structure and magnetic properties of Mn-doped MoS2 monolayer (Mo0.75Mn0.25S2). The spin-up electron states exhibit metallic properties, while the spin-down electron states exhibit insulating properties, which indicates the half-metallic properties of Mo0.75Mn0.25S2 monolayer. The doping of Mn atoms leads to the strong ferromagnetism of the system with the coupling between dopant Mn 3d orbitals via Mo 4d and S 3p states. Under the generalized Bloch condition, we explore the dispersion relation of Mo0.75Mn0.25S2 between the spin-spiral energy E((q) over right arrow) and the wave vector ((q) over right arrow) . The exchange coupling coefficient J(i)(i = 1, 2, 3, 4) is obtained through the Heisenberg interaction (HBI) model. It is found that although the first nearest-neighbor J(1) plays an important role, the second-nearest-neighbor interaction exchange coupling coefficient J(2) is non-negligible. (C) 2021 Elsevier B.V. All rights reserved.
Strengthening and Weakening by Dislocations in Monolayer MoS 2

Li Yang,Jinjie Liu,Yanwen Lin,Ke Xu,Xuezheng Cao,Zhisen Zhang,Jianyang Wu

DOI: https://doi.org/10.1021/acs.chemmater.1c02797

IF: 10.508

2021-11-08

Chemistry of Materials

Abstract:Dislocations govern the properties of crystals. Yet, how pentagon–heptagon (5|7) pairs in grain boundaries (GBs) affect the mechanical properties of MoS2 remains poorly known. Using atomistic simulations and the continuum disclination dipole model, we show that depending on the tilt angle and 5|7 dislocation arrangement, MoS2 GB strength can be enhanced or reduced with the tilt angle. For zigzag-tilt GBs primarily composed of Mo5|7 + S5|7 dislocations, GB strength monotonically increases as the square of the tilt angle. For armchair-tilt GBs with Mo5|7 or S5|7 dislocations, however, the trend of GB strength breaks down, as dislocations are unevenly spaced. Moreover, mechanical failure initiates at the bond shared by 5|7 rings, in contrast to graphene in which failure occurs at the bond shared by 6|7 rings. This work provides new insights into the mechanical design of synthetic transition metal dichalcogenide crystals via dislocation engineering.

materials science, multidisciplinary,chemistry, physical
Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene

Xiaolong Liu,Itamar Balla,Hadallia Bergeron,Mark C. Hersam

DOI: https://doi.org/10.48550/arXiv.1604.00682

2016-04-03

Materials Science

Abstract:With reduced degrees of freedom, structural defects are expected to play a greater role in two-dimensional materials in comparison to their bulk counterparts. In particular, mechanical strength, electronic properties, and chemical reactivity are strongly affected by crystal imperfections in the atomically thin limit. Here, ultra-high vacuum (UHV) scanning tunneling microscopy (STM) and spectroscopy (STS) are employed to interrogate point and line defects in monolayer MoS2 grown on epitaxial graphene (EG) at the atomic scale. Five types of point defects are observed with the majority species showing apparent structures that are consistent with vacancy and interstitial models. The total defect density is observed to be lower than MoS2 grown on other substrates, and is likely attributed to the van der Waals epitaxy of MoS2 on EG. Grain boundaries (GBs) with 30{\deg} and 60{\deg} tilt angles resulting from the rotational commensurability of MoS2 on EG are more easily resolved by STM than atomic force microscopy at similar scales due to the enhanced contrast from their distinct electronic states. For example, band gap reduction to ~0.8 eV and ~0.5 eV is observed with STS for 30{\deg} and 60{\deg} GBs, respectively. In addition, atomic resolution STM images of these GBs are found to agree well with proposed structure models. This work offers quantitative insight into the structure and properties of common defects in MoS2, and suggests pathways for tailoring the performance of MoS2/graphene heterostructures via defect engineering.
Strengthening and Weakening by Dislocations in Monolayer MoS2

Li Yang,Jinjie Liu,Yanwen Lin,Ke Xu,Xuezheng Cao,Zhisen Zhang,Jianyang Wu

DOI: https://doi.org/10.48550/arXiv.2107.04762

2021-07-10

Abstract:Dislocations govern the properties of any crystals. Yet, how dislocation of pentagonheptagon (5|7) in grain boundaries (GBs) affects the mechanical properties of two-dimensional MoS2 crystals remains poorly known. Using atomistic simulations and continuum disclination dipole model, we show that, depending on the tilt angle and 5|7 dislocation arrangement, MoS2 GB strength can be enhanced or reduced with tilt angle. For zigzag-tilt GBs primarily composed of Mo5|7+S5|7 dislocations, GB strength monotonically increases as the square of tilt angle. For armchair-tilt GBs with Mo5|7 or S5|7 dislocations, however, the trend of GB strength breaks down as 5|7 dislocations are non-evenly spaced. Moreover, mechanical failure initiates at the bond shared by 5|7 rings, in contrast to graphene where failure occurs at the bond shared by 6|7 rings. This work provides new insights into mechanical design of synthetic transition metal dichalcogenide crystals via dislocation engineering.

Materials Science
Remarkably high thermal-driven MoS2 grain boundary migration mobility and its implications on defect healing

Xiangjun Liu,Zhi Gen Yu,Gang Zhang,Yong-Wei Zhang

DOI: https://doi.org/10.1039/d0nr03871g

IF: 6.7

2020-09-14

Nanoscale

Abstract:Two-dimensional (2D) transition-metal dichalcogenides (TMDs) hold great potential for many important device applications, such as field effect transistors and sensors, which require a robust control of defect type, density, and distribution. However, how to control the defect type, density, and distribution in these materials is still a challenge. In this study, we explore the kinetics and dynamics of four types of grain boundaries (GBs) in monolayer MoS2, which are composed of S-polar dislocation (S5|7), Mo-polar dislocation (Mo5|7), dislocation-double S vacancy complex (S4|6), and dislocation-double S interstitial complex (S6|8), respectively. Our study shows that these four GBs in monolayer MoS2 exhibit a great disparity in their migration behavior. More specifically, the S4|6 and S6|8 GBs possess a much higher migration mobility than the S5|7 and Mo5|7 GBs under the same thermal fluctuations or temperature gradient. Interestingly, the S4|6 and S6|8 GBs follow an abnormal relationship with temperature, due to the change in defect configurations with temperature. Our study further shows that the remarkably high mobilities of the S4|6 and Mo6|8 GBs may enable the reactions of GBs, leading to the annihilation and reduction of defect density. In addition, the movement of GBs in MoS2 under a temperature gradient field can cause defect redistribution, which in turn changes the thermal conductivity. The present study not only deepens our understanding of the dynamic evolution of GBs in TMDs, but also presents new opportunities to engineer GBs for novel electronic applications.
Well-Hidden Grain Boundary in the Monolayer MoS2 Formed by a Two-Dimensional Core-Shell Growth Mode

Wenting Zhang,Yue Lin,Qi Wang,Weijie Li,Zhifeng Wang,Jiangluqi Song,Xiaodong Li,Lijie Zhang,Lixin Zhu,Xiaoliang Xu

DOI: https://doi.org/10.1021/acsnano.7b06232

IF: 17.1

2017-01-01

ACS Nano

Abstract:Guided by the hexagonal lattice symmetry, triangles and hexagons are the most basic morphological units for two-dimensional (2D) transition metal dichalcogenides (TMDs) synthesized by chemical vapor deposition (CVD). Also, it is widely acknowledged that these units start from the single nucleation site and then grow epitaxially. Accordingly, the triangular monolayer (ML) samples are generally considered as single crystals. Here, we report a 2D core-shell growth mode in the CVD process for ML-MoS2, which leads to one kind of "pseudo" single-crystal triangles containing triangular outline grain boundaries (TO-GBs). It is difficult to be optically distinguished from the "true" single-crystal triangles. The weakening of Raman peaks and the remarkable enhancement of photoluminescence (PL) are found at the built-in TO-GBs, which could be useful for high-performance optoelectronics. In addition, the electrical measurements indicate that the TO-GBs are conductive. Furthermore, TO-GBs and the common grain boundaries (CO-GBs) can coexist in a single flake, whereas their optical visibility and optical modifications (Raman and PL) are quite different. This work is helpful in further understanding the growth mechanism of 2D TMD materials and may also play a significant role in related nanodevices.
Remarkably High Thermal-Driven MoS2grain Boundary Migration Mobility and Its Implications on Defect Healing

Xiangjun Liu,Zhi Gen Yu,Gang Zhang,Yong-Wei Zhang

DOI: https://doi.org/10.1039/d0nr03871g

IF: 6.7

2020-01-01

Nanoscale

Abstract:Two-dimensional (2D) transition-metal dichalcogenides (TMDs) hold great potential for many important device applications, such as field effect transistors and sensors, which require a robust control of defect type, density, and distribution. However, how to control the defect type, density, and distribution in these materials is still a challenge. In this study, we explore the kinetics and dynamics of four types of grain boundaries (GBs) in monolayer MoS2, which are composed of S-polar dislocation (S5|7), Mo-polar dislocation (Mo5|7), dislocation-double S vacancy complex (S4|6), and dislocation-double S interstitial complex (S6|8), respectively. Our study shows that these four GBs in monolayer MoS(2)exhibit a great disparity in their migration behavior. More specifically, the S4|6 and S6|8 GBs possess a much higher migration mobility than the S5|7 and Mo5|7 GBs under the same thermal fluctuations or temperature gradient. Interestingly, the S4|6 and S6|8 GBs follow an abnormal relationship with temperature, due to the change in defect configurations with temperature. Our study further shows that the remarkably high mobilities of the S4|6 and Mo6|8 GBs may enable the reactions of GBs, leading to the annihilation and reduction of defect density. In addition, the movement of GBs in MoS(2)under a temperature gradient field can cause defect redistribution, which in turn changes the thermal conductivity. The present study not only deepens our understanding of the dynamic evolution of GBs in TMDs, but also presents new opportunities to engineer GBs for novel electronic applications.
Observing Grain Boundaries in CVD-grown Monolayer Transition Metal Dichalcogenides.

Thuc Hue Ly,Ming-Hui Chiu,Ming-Yang Li,Jiong Zhao,David J. Perello,Magdalena Ola Cichocka,Hye Min Oh,Sang Hoon Chae,Hye Yun Jeong,Fei Yao,Lain-Jong Li,Young Hee Lee

DOI: https://doi.org/10.1021/nn504470q

IF: 17.1

2014-01-01

ACS Nano

Abstract:Two-dimensional monolayer transition metal dichalcogenides (TMdCs), driven by graphene science, revisit optical and electronic properties, which are markedly different from bulk characteristics. These properties are easily modified due to accessibility of all the atoms viable to ambient gases, and therefore, there is no guarantee that impurities and defects such as vacancies, grain boundaries, and wrinkles behave as those of ideal bulk. On the other hand, this could be advantageous in engineering such defects. Here, we report a method of observing grain boundary distribution of monolayer TMdCs by a selective oxidation. This was implemented by exposing directly the TMdC layer grown on sapphire without transfer to ultraviolet light irradiation under moisture-rich conditions. The generated oxygen and hydroxyl radicals selectively functionalized defective grain boundaries in TMdCs to provoke morphological changes at the boundary, where the grain boundary distribution was observed by atomic force microscopy and scanning electron microscopy. This paves the way toward the investigation of transport properties engineered by defects and grain boundaries.
An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2

Zhi Gen Yu,Yong-Wei Zhang,Boris I Yakobson

DOI: https://doi.org/10.1021/acs.nanolett.5b02769

2015-10-14

Abstract:Two-dimensional (2D) molybdenum disulfide (MoS2) has attracted significant attention recently due to its direct bandgap semiconducting characteristics. Experimental studies on monolayer MoS2 show that S vacancy concentration varies greatly; while recent theoretical studies show that the formation energy of S vacancy is high and thus its concentration should be low. We perform density functional theory calculations to study the structures and energetics of vacancy and interstitial in both grain boundary (GB) and grain interior (GI) in monolayer MoS2 and uncover an anomalous formation pathway for dislocation-double S vacancy (V2S) complexes in MoS2. In this pathway, a (5|7) defect in an S-polar GB energetically favorably converts to a (4|6) defect, which possesses a duality: dislocation and double S vacancy. Its dislocation character allows it to glide into GI through thermal activation at high temperatures, bringing the double vacancy with it. Our findings here not only explain why VS is predominant in exfoliated 2D MoS2 and V2S is predominant in chemical vapor deposition (CVD)-grown 2D MoS2 but also reproduce GB patterns in CVD-grown MoS2. The new pathway for sulfur vacancy formation revealed here provides important insights and guidelines for controlling the quality of monolayer MoS2.

Dopants and Grain Boundary Effects in Monolayer MoS2: a First-Principles Study.

Atomistic Dynamics of Sulfur-Deficient High-Symmetry Grain Boundaries in Molybdenum Disulfide

All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of Mos2/Graphene Heterostructures

Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS 2(1- x ) Se 2 x Alloy

Grain Boundary and Misorientation Angle-Dependent Thermal Transport in Single-Layer MoS2.

The Effects of Nonmetal Dopants on the Electronic, Optical, and Catalytic Performances of Monolayer WSe2 by a First-Principles Study

Formation of Defects and Impurities in MoSx and Their Effect on Electronic Properties

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Doping MoS2 Monolayer with Nonmetal Atoms to Tune Its Electronic and Magnetic Properties, and Chemical Activity: a Computational Study

Revealing the Grain Boundary Formation Mechanism and Kinetics During Polycrystalline MoS2 Growth.

Impact of Grain Boundaries on the Electronic Properties and Schottky Barrier Height of MoS 2 @Au Heterojunctions

Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide

Magnetic Properties of Mn-doped Monolayer MoS2

Strengthening and Weakening by Dislocations in Monolayer MoS 2

Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene

Strengthening and Weakening by Dislocations in Monolayer MoS2

Remarkably high thermal-driven MoS2 grain boundary migration mobility and its implications on defect healing

Well-Hidden Grain Boundary in the Monolayer MoS2 Formed by a Two-Dimensional Core-Shell Growth Mode

Remarkably High Thermal-Driven MoS2grain Boundary Migration Mobility and Its Implications on Defect Healing

Observing Grain Boundaries in CVD-grown Monolayer Transition Metal Dichalcogenides.

An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2