Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Characterization of grown-in defects in Si wafers by gas decoration

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Crystal-originated Particles in Germanium-Doped Czochralski Silicon Crystal

An Etchant for Delineation of Flow Pattern Defects in Heavily Doped N-Type Silicon Wafers

Flow Pattern Defects in Germanium-Doped Czochralski Silicon Crystals

The dissolution behavior of crystal-originated particle in 300 mm Czochralski silicon under argon annealing

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

(Invited) Defects in Cast-Mono Crystalline Silicon

Micro-defects in Ge doped Czochralski grown Si crystals

Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals

On the Impact of Heavy Doping on Grown-In Defects in Czochralski-Grown Silicon

Characterization of a Czochralski grown silicon crystal doped with 10 20 cm-3 germanium

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Evolution of secondary defects in arsenic implanted Si

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon