Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Proposal of High Density Two-Bits-Cell Based NAND-Like Magnetic Random Access Memory.

Demonstration of a NAND-Like SOT-MRAM Multi-Level Cell with Two Operational Modes

High-density Magnetoresistive Random Access Memory Operating at Ultralow Voltage at Room Temperature

Write-Efficient STT/SOT Hybrid Triple-Level Cell for High-Density MRAM

Two-bit Multi-Level Spin Orbit Torque MRAM with the Fully One-Step Write Operation.

DFSTT-MRAM: Dual Functional STT-MRAM Cell Structure for Reliability Enhancement and 3-D MLC Functionality

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Reconfigured Self-Referenced MRAM Cell Supporting 2.527-Fj/bit Reading and in Situ Multiplication

Area-Efficient 1T-2D-2MTJ SOT-MRAM Cell for High Read Performance

Proposal of A Novel Hybrid NAND-Like MRAM/DRAM Memory Architecture

A Multi-Level Cell for STT-MRAM Realized by Capping Layer Adjustment

3T2M Canted-Type X SOT-MRAM: Field-free, High-Energy-efficiency, and High-Read-margin Memory Toward Cache Applications

Magnetic Random Access Memory (MRAM)

Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching

Area-Aware Optimization of MRAM Crossbar Array Bit-Cell for In-Memory Computing

Complementary-Magnetization-Switching Perpendicular Spin-Orbit Torque Random-Access Memory Cell for High Read Performance

Interplay Bitwise Operation in Emerging MRAM for Efficient In-memory Computing

High-Density NAND-Like Spin Transfer Torque Memory with Spin Orbit Torque Erase Operation

Commodity Bit-Cell Sponsored MRAM Interaction Design for Binary Neural Network

Magnetic Configurations and State Diagram of Nanoring Magnetic Tunnel Junctions

Resistance-Sum Architecture for Voltage-Controlled SOT-MRAM based Computing-in-Memory With Hybrid References