Abstract:The realization of electrospinning‐derived oxide nanofiber‐based transistors composed of In2O3 and ZnO has been reported. By controlling the doping level in nanofibers, significant enhancement in both the electron mobility and thin‐film transistor (TFT) stress stability have been demonstrated. Current findings elucidate the significant advance of electrospinning‐derived oxide nanofiber‐based transistors toward practical applications for future low‐cost and high‐performance electronics. Although In2O3 nanofibers (NFs) are regarded as one of the active channel materials for next‐generation, low‐cost thin‐film transistors (TFTs), these NFs‐based devices still suffer from the degraded carrier mobility and operational instability, limiting the ability of such devices to replace current polycrystalline silicon technologies. Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In2O3 NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO/SiO2 TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field‐effect mobility (μFE) of 6.38 cm2 V−1 s−1, the larger ION/IOFF of 4.12 × 107 and operation in the energy‐efficient enhancement‐mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD‐derived Al2O3 films as the gate dielectric into TFTs devices, their electron mobility and ION/IOFF can be further improved to 37.82 cm2 V−1 s−1 and 2.92 × 108, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor‐loaded unipolar inverter is built by using InZnO/Al2O3 TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large‐scale electronics.

Low-Voltage Operating Field-Effect Transistors and Inverters Based on In₂O₃ Nanofiber Networks

Low-Voltage Operating Field-Effect Transistors and Inverters Based on In2O3 Nanofiber Networks

Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

Electrospinning-Driven InHfOx Nanofiber Channel Field-Effect Transistors and Humidity Stability Exploration

ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

Modulating Electrical Performances of In2O3 Nanofiber Channel Thin Film Transistors Via Sr Doping

ZnO Nanofiber Field‐Effect Transistor Assembled by Electrospinning

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Electrospinning-Driven Dual-Channel-Based Field-Effect Transistors by Heterojunction Architecture

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Electrospun P-Type Cuo Nanofibers for Low-Voltage Field-Effect Transistors

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Self-Welding and Low-Temperature Formation of Metal Oxide Nanofiber Networks and its Application to Electronic Devices

Combustion Synthesis of Electrospun LaInO Nanofiber for High-Performance Field-Effect Transistors

Photochemical Activation of Electrospun In2O3 Nanofibers for High-Performance Electronic Devices.

From Conductor to Semiconductor: Diameter Tuning of Electrospun ITO Nanowire for Low-Cost Electronics

High-performance Field Effect Transistors Based on Large Ratio Metal (al、ga、cr) Doped In2O3 Nanofibers

Draw Spinning of Wafer‐Scale Oxide Fibers for Electronic Devices

Modulating Electrical and Photoelectrical Properties of One-Step Electrospun One-Dimensional SnO2 Arrays

Fabrication of Nanofibers by Low-Voltage Near-Field Electrospinning

Recent advances in electrospun fiber based electronics