Abstract:The realization of electrospinning‐derived oxide nanofiber‐based transistors composed of In2O3 and ZnO has been reported. By controlling the doping level in nanofibers, significant enhancement in both the electron mobility and thin‐film transistor (TFT) stress stability have been demonstrated. Current findings elucidate the significant advance of electrospinning‐derived oxide nanofiber‐based transistors toward practical applications for future low‐cost and high‐performance electronics. Although In2O3 nanofibers (NFs) are regarded as one of the active channel materials for next‐generation, low‐cost thin‐film transistors (TFTs), these NFs‐based devices still suffer from the degraded carrier mobility and operational instability, limiting the ability of such devices to replace current polycrystalline silicon technologies. Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In2O3 NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO/SiO2 TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field‐effect mobility (μFE) of 6.38 cm2 V−1 s−1, the larger ION/IOFF of 4.12 × 107 and operation in the energy‐efficient enhancement‐mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD‐derived Al2O3 films as the gate dielectric into TFTs devices, their electron mobility and ION/IOFF can be further improved to 37.82 cm2 V−1 s−1 and 2.92 × 108, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor‐loaded unipolar inverter is built by using InZnO/Al2O3 TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large‐scale electronics.

Draw Spinning of Wafer‐Scale Oxide Fibers for Electronic Devices

ZnO Nanofiber Field‐Effect Transistor Assembled by Electrospinning

High-Performance Fiber-Shaped Vertical Organic Electrochemical Transistors Patterned by Surface Photolithography

Low-Voltage Operating Field-Effect Transistors and Inverters Based on In2O3 Nanofiber Networks

Electrohydrodynamic Direct-Writing ZnO Nanofibers for Device Applications

Synthesis of aligned titanium-based oxide fibre arrays

Designer patterned functional fibers via direct imprinting in thermal drawing

Shear-enhanced Liquid Crystal Spinning of Conjugated Polymer Fibers

Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

High-quality semiconductor fibres via mechanical design

Microfiber and Nanofiber Optics: Principles and Applications

Template-Assisted Fabrication of Single-Crystal-Like Polymer Fibers for Efficient Charge Transport

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Electronic Devices Based on Oxide Thin Films Fabricated by Fiber-to-Film Process.

Aligned Indium Oxide Nanofiber to Achieve High Mobility and High Stability Field-Effect Transistor

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

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Novel fabrication and optoelectronic property of semiconductor filaments by optical-fiber thermal drawing