Self-Welding and Low-Temperature Formation of Metal Oxide Nanofiber Networks and its Application to Electronic Devices
Chuanyu Fu,Yanan Ding,Youchao Cui,You Meng,Zhao Yao,Guoxia Liu,Fukai Shan
DOI: https://doi.org/10.1109/led.2019.2953314
IF: 4.8157
2020-01-01
IEEE Electron Device Letters
Abstract:Electrospinning technique is considered to be one of the most powerful approaches for the preparation of one-dimensional (1D) metal oxide nanofiber networks (NFNs). In this report, In<sub>2</sub>O<sub>3</sub> NFNs were fabricated by electrospinning using polymethyl methacrylate (PMMA) as polymer and epoxy resin as additive. Benefiting from the excellent chemical properties of PMMA, In<sub>2</sub>O<sub>3</sub> NFNs with impact stacking were prepared at a relatively low annealing temperature by a welding process. The welded In<sub>2</sub>O<sub>3</sub> NFNs were characterized by various techniques and the electrical performance of the field-effect transistors (FETs) based on the welded In<sub>2</sub>O<sub>3</sub> NFNs were systematically investigated. It is observed that the FET based on In<sub>2</sub>O<sub>3</sub> NFNs annealed at 320 °C, with a nanofiber density of $0.4,,mu text{m}^{-{1}}$ exhibits high electrical performance, including an ${I}_{ {mathrm{{ON}}}}/{I}_{ {mathrm{{OFF}}}}$ of $sim {5}times {10}^{{7}}$ , a $mu _{text {FE}}$ of 1.27 cm<sup>2</sup>/V s, an on voltage of −8 V and a hysteresis of 5 V. A device array with ${4}times {5}$ units was fabricated and tested, confirming the excellent reliability and reproducibility of the FET.
engineering, electrical & electronic