Abstract:ABSTRACT The interaction between P and GaAs(100) surface has been studied by XPS, UPS, HREELS and LEED. The results showthat, at room temperature, P is adsorbed on the GaAs surface to form amorphous P thin film. There is less than one monolayer of P atoms bonded to the Ga atoms of the substrate at the interface. The amorphous P overlayer covered on the topof GaAs results in 0.2eV lowering of the GaAs surface barrier. The thermal annealing at 100°C-300°C will cause most of theamorphous P desorbed, with some randomly distributed P-clusters left on the surface. High temperature annealing will makeall the remaining P atoms interact with the substrate to form Ga-P bonds. The exchange reaction between deposited P and thesubstrate will take place successively to form GaAsP thin film when P is deposited on GaAs substrate at higher temperatures.-This film is suggested to be a promising passivating film for GaAs surface. 1JJTRODUCTION The interaction between column V elements with Ill-V compound semiconductors has long been a widely concerned topic.In the rapid development of band gap engineering and new type semiconductor heterojunction devices, great importance has

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