Influence of Stoichiometric Ratio on the Properties of BaTiO3 Thin Films Grown on Nickel Substrates

DU Hui,LI Yang,LIANG Wei-zheng,GAO Min,ZHANG Yin,LIN Yuan
DOI: https://doi.org/10.3969/j.issn.1001-0548.2015.05.024
2015-01-01
Abstract:Barium titanate (BaTiO3) thin films were successfully deposited on polycrystalline Ni substrates by the polymer-assisted deposition (PAD) technique. The influence of stoichiometric ratio of precursor solution to the dielectric properties and leakage characteristics of barium titanate thin film was studied. The experimental results show that TiO2 appears in barium titanate films with excess Ti. With an appropriate concentration of excess Ti, leakage current density could be reduced by an order of magnitude, and dielectric loss could be reduced 50%, while dielectric constant of the film could be increased. The leakage mechanisms as well as the possible reasons for the impacts of Ti content on the dielectric and leakage properties of barium titanate thin film are also discussed.
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