Abstract:Multi-layered bottom electrodes constituted by conductive Ti5Si3 thin films with and without TiSi nanowires were prepared on glass substrates by Atmosphere Pressure Chemical Vapor Deposition (APCVD) method. Pb0.6Sr0.4(Ti0.97Mg0.03)O-2.97 (PST) thin films were deposited on the Ti-Si bottom electrodes by Radio-frequency Magnetron Sputtering Method. The morphology and phase structure of the PST thin films were observed and identified by FE-SEM and XRD, respectively. The dielectric properties of the PST thin films deposited on Ti-Si substrates were measured by Agilent 4294A Impedance Analyzer. Results show that the formation ability of the PST thin films can be reinforced by increasing crystallinity of Ti5Si3 thin films and increasing amount of TiSi nanowires. The preparation temperature of the PST thin films deposited on Ti5Si3 and TiSi-nanowire/Ti5Si3 bottom electrodes decreases by 75 degrees C and 98 degrees C, respectively, compared with the situation on ITO/glass substrate. The permittivity of the PST thin films deposited on TiSi-nanowire/Ti5Si3 bottom electrode is about 4 times higher than that deposited on ITO. The lowest dielectric loss of PST/TiSi-nanowire/Ti5Si3 thin films is <0.1 within a wide frequency range till 10 MHz, exhibiting impressive frequency stability compared with that deposited on ITO. High capacitance and high tunability also occur in PST/TiSi-nanowire/Ti5Si3 thin films. The tunability of the PST thin films is about 2.5 times higher on TiSi-nanowire/Ti5Si3 bottom electrode than that on ITO bottom electrode. (C) 2014 Elsevier Ltd. All rights reserved.

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