Preparation and Transport Properties of Mg2 Si1-xSnxBiy Thermoelectric Materials by One-Step Synthesis Method

Yongzhong ZHANG,Bo ZENG,Shaoping CHEN,Qingsen MENG,Yang LI
DOI: https://doi.org/10.16355/j.cnki.issn1007-9432tyut.2015.06.002
2015-01-01
Abstract:On the basis of the heavy/light bands convergence degeneracy and alloy scattering , it is possible to get higher figure of merit for Mg2Si1 - xSnx by tuning band structure ,in which the density of states is increased without a decrease of hall mobility of carriers .In this work ,magnesi‐um hydride was used ,instead of elemental magnesium ,to prepare n‐type Bi doped Mg2Si1 - xSnx by one‐step synthesis method .By adjusting the ratio of reactant ,the effect of different Si/Sn ratio and content of Bi on the band structure and transport properties of M g 2 Si1 - x Snx has been studied . The SEM microstructure of the fracture shows fine polycrystalline lath with average space less than 200 nm .T he increase of Sn and Bi is helpful in decreasing thermal lattice conductivity by lat‐tice distortion and improving electrical properties as donor ,respectively ,and thus the figure of merit will be improved as well .The Mg2Si0.6Sn0.4Bi0.01 composite has a maximum figure of merit of 1.29 at 775 K .One‐step synthesis method is characterized by simple operation and easy control of composition of products .The pure Bi‐doped Mg2Si1 - x SnxBiy nanocomposited thermoelectric materials w ere achieved .
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