Electrically tunable bandgaps for g-ZnO/ZnX (X = S, Se, Te) 2D semiconductor bilayers
Che-Min Lin,Chun-Fu Chang,Wan-Chen Hsieh,Ching-Wen Chang,Sung-Wei Yeh,Chun-Jung Su,Yu-Chiao Lin,Yu-Hsuan Yu,Chien-Wei Chen,Chi-Chung Kei,Chih-Hsiung Liao,Di Chen,Wei-Kan Chu,Li-Wei Tu,Paritosh V. Wadekar,Tsan-Chuen Leung,Hye-Won Seo,Bor-Yann Liaw,Quark Yungsung Chen,Yu-yuan Zheng,Kung-Shiuh Huang,Kuan-Tsae Huang
DOI: https://doi.org/10.1016/j.vacuum.2021.110386
IF: 4
2021-10-01
Vacuum
Abstract:<p>Heterostructures of van der Waal (vdW) materials show novel optical properties when stacked on top of each other. In this report, using the first principle calculations, we study the electronic band structures of heterostructures composed of two VdW semiconductors namely g-ZnO/ZnX (X = S, Se, and Te). Here the cation is common while the anion is different. Our calculations reveal the formation of a type II band alignment in these heterostructures. The optical band gap shows a linear dependence to the external electric field (E) applied normally to the interface. Bader charge analysis results indicate (1) the number of electrons lost (gained) by ZnX is equal to the number of electrons gained (lost) by g-ZnO (2) indicating that the linear relationship with the applied electric field, is closely related to charge transfer. We have also explored the effects of layer thickness. We observe that as the g-ZnO layer increases, the band gap reduces. Such tunability of g-ZnO/ZnX heterostructures can make them potential candidates for optoelectronic devices.</p>
materials science, multidisciplinary,physics, applied