Manifestation of interface anisotropy in CdTe quantum wells

L. V. Kotova,A. V. Platonov,R. André,H. Mariette,V. P. Kochereshko

DOI: https://doi.org/10.1103/PhysRevB.107.235302

2022-07-25

Abstract:Photoluminescence and polarized reflection spectra of quantum well structures with symmetric Cd$_{0.9}$Zn$_{0.1}$Te/CdTe/Cd$_{0.9}$Zn$_{0.1}$Te and asymmetric Cd$_{0.9}$Zn$_{0.1}$Te/CdTe/Cd$_{0.4}$Mg$_{0.6}$Te barriers were studied. The Stokes parameters of the reflected light from these structures were measured. In the structures with symmetric barriers, exciton resonances were found in the reflection spectra and were not present in the photoluminescence spectra. In structures with asymmetric barriers, in the region of exciton resonances, the phenomenon of light birefringence was detected, caused by a lower symmetry of the interfaces compared to the symmetry of bulk crystals. A discussion of both phenomena was given.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the manifestation of interface anisotropy in CdTe quantum well structures, especially the photoluminescence (PL) and polarized reflection spectra in symmetric and asymmetric barrier structures. Specifically, the paper focuses on the following points:

1. **Manifestation of interface anisotropy**:
- In the symmetric barrier structure, excitonic resonances in the reflection spectra were found, but these resonances were not observed in the photoluminescence spectra.
- In the asymmetric barrier structure, the phenomenon of optical birefringence caused by lower interface symmetry was detected in the excitonic resonance region, which is different from the symmetry of the bulk material.

2. **Experimental background and motivation**:
- Due to the lattice mismatch (6.4%) between CdTe and ZnTe compounds, mechanical stress will be generated at the interface, leading to problems such as phase transformation and band - gap shift.
- These problems limit the wide use of CdTe - and ZnTe - based heterostructures in practical applications. Therefore, studying interface characteristics is crucial for practical applications.

3. **Specific research content**:
- The researchers experimentally measured the photoluminescence and polarized reflection spectra of CdTe quantum well structures with symmetric and asymmetric barriers.
- Analyzed the Stokes parameters to understand the polarization characteristics of the reflected light.
- Explored how interface anisotropy affects the optical properties of these structures, especially the dielectric response near the excitonic resonance.

### Formula summary

Some of the key formulas involved in the paper are as follows:

- **Effective potential energy**:
\[
V_{\text{eff}}(z_h) = V(z_h) + \frac{e^2}{\epsilon_0} \left( \frac{1}{2\tilde{a}_B} + \frac{e^2}{\epsilon_0} \frac{L^4}{\tilde{a}_B^2} \right)
\]

- **Degree of circular polarization**:
\[
P_{\text{circ}} = \frac{R_{\sigma^+} - R_{\sigma^-}}{R_{\sigma^+} + R_{\sigma^-}}
\]
\[
P_{\text{lin}'} = \frac{R_{x'} - R_{y'}}{R_{x'} + R_{y'}}
\]

- **Reflection coefficient**:
\[
r = \frac{r_0 + t_0 t_1 e^{2i\phi}}{1 - r_1 r_{\text{QW}} e^{2i\phi}}
\]

- **Calculation of degree of circular polarization**:
\[
P_{\text{circ}} = \frac{\Gamma_{x'}^0 \Gamma_{y'}^0 \Delta \omega (\Gamma_{x'}^0 - \Gamma_{y'}^0)}{| \Delta \omega - i \Gamma_{x'} |^2 | \Delta \omega - i \Gamma_{y'} |^2}
\]

### Conclusion

Through these studies, the paper reveals the influence of interface anisotropy on the optical properties of CdTe quantum well structures, especially the birefringence phenomenon in the excitonic resonance region. This finding helps to better understand interface characteristics and provides a theoretical basis for optimizing CdTe - based heterostructure devices.