Andreev spectroscopy of doped HgTe quantum wells

M. Guigou,J. Cayssol

DOI: https://doi.org/10.1103/PhysRevB.82.115312

2010-08-09

Abstract:We investigate the Andreev reflection process in high-mobility HgTe/CdTe quantum wells. We find that Andreev conductance probes the dynamics of massive 2+1 Dirac fermions, and that both specular Andreev reflection and retroreflection can be realized even in presence of a large mismatch between the Fermi wavelengths at the two sides of the normal/superconducting junction.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the dynamic characteristics of mass 2 + 1 - dimensional Dirac fermions in these systems by studying the Andreev reflection process in doped HgTe (mercury telluride) quantum wells. Specifically, the author focuses on how to achieve specular Andreev reflection and back - scattering in normal metal / superconductor junctions, even in the presence of a large Fermi - wavelength mismatch.

### Research Background
- **Topological Insulators and Quantum Spin Hall States**: Three - dimensional topological insulators (TIs) and two - dimensional quantum spin Hall (QSH) states are new electronic phases, which are characterized by topological invariants rather than spontaneous symmetry breaking.
- **HgTe Quantum Wells**: HgTe quantum wells are ideal materials for studying these topological phases because they can drive band - gap inversion through strong spin - orbit interactions, thus exhibiting protected edge or surface states.
- **Andreev Reflection**: Andreev reflection is a fundamental scattering process in which an incident electron is converted into a reflected hole at the interface between a normal metal and a superconductor. This phenomenon can be used to probe carrier dynamics, especially in HgTe quantum wells, whose energy - band structure is between linear and quadratic dispersion.

### Main Problems of the Paper
1. **Andreev Reflection as a Probing Tool**: The author hopes to reveal the dynamic characteristics of carriers in HgTe quantum wells, especially the behavior of mass 2 + 1 - dimensional Dirac fermions, by studying Andreev reflection.
2. **Specular Andreev Reflection**: How to achieve specular Andreev reflection and back - scattering even in the case of a large Fermi - wavelength mismatch. This involves understanding different types of Andreev reflection (such as specular reflection and back - scattering) and their sensitivity to band - gap inversion.
3. **Multi - channel Differential Conductance**: Derive multi - channel differential conductance from single - channel results, which is a key physical quantity measured in experiments.

### Main Conclusions
- Andreev reflection can effectively probe the carrier dynamics in HgTe quantum wells. In particular, in the cases of low - doping and high - doping, the Andreev reflection probability varies with energy and angle differently.
- In the case of low - doping, Andreev reflection can reveal the existence of the semiconductor band - gap and is completely suppressed within a specific energy range.
- In the case of high - doping, Andreev reflection appears as standard back - scattering, and its probability gradually decays with the increase of the quadratic dispersion term.

### Experimental Verification
The author proposes that by preparing sufficiently transparent contact points, the predicted differential conductance characteristics can be experimentally verified on the existing HgTe heterostructures, especially the possibility of observing specular Andreev reflection under low - doping conditions.

In conclusion, this paper aims to study the unique carrier dynamics in HgTe quantum wells through Andreev reflection, providing a new perspective for understanding topological insulators and quantum spin Hall states.