Secondary Electron Emission from N-type and P-type Si Induced by 129Xeq+

ZENG Lixia,XU Zhongfeng,ZHAO Yongtao,WU Fan,LIU Xueliang,CHENG Rui,ZHOU Xianming,LEI Yu,LIU Shidong,ZHANG Yanning
DOI: https://doi.org/10.11804/nuclphysrev.33.03.365
2016-01-01
Abstract:The electron emissions from N-type Si and P-type Si induced by 1.8 MeV 129Xeq+ are measured in the National Laboratory of Heavy Ion Research Facility in Lanzhou, The contribution to electron emission yield from potential energy of incident ions is studied through changing the charge state of incident ions. The results show that for the same incident ion, electron emission yield of N type Si surface is higher than that of P-type Si surface about 12.5%. For incident ions with the same kinetic energy, both electron emission yields of two targets increase linearly with incident ion energy. In addition, the electron emissions induced by 3.4 MeV 129 Xeq+ from N-type Si and P-type Si mentioned above are measured, which give similar results. The experimental results are analyzed and discussed using work function from two angles of the kinetic electron emission and the potential energy electron emission.
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