Abstract:A double sensing with selective bitline voltage regulation (DS-SBVR) scheme is proposed to improve the throughput of ultralow-voltage static random access memory (SRAM). It senses the bitline voltage swing twice and compares two samples for confirmation. The bitline voltage is dynamically regulated by charge sharing between two sensing steps. Different from other timing speculative SRAMs, its error flag is generated much earlier; therefore, it achieves a higher reading throughput. Meanwhile, a digitized timing scheme is proposed to generate configurable timing pulses for the DS-SBVR. Compared with other timing techniques, it has a better ability to process, voltage, temperature (PVT) tracking and variance suppression. For fair comparison of performance/power/area, three different column-based timing speculative designs are implemented in the same technology. A 28-nm test chip including 40 SRAM macros (128 $\times $ 32) is fabricated to demonstrate the scheme. Compared with the conventional design, measurements show that DS-SBVR achieves 1.45 $\times $ throughput gain at 0.6-V SS corner. The figure of merit (FOM) is introduced for power, performance, and area (PPA) gain comparison. Compared with the conventional design, the FOMs of PPA gain are 1.54 and 2.33 in 128-row and 512-row memories, respectively. Compared with other timing speculative SRAMs, it achieves 1.83 $\times $ –2.24 $\times $ improvement.

An Ultra-Dynamic Voltage Scalable (U-DVS) SRAM Design

A 0.2 V-1.8 V 8T SRAM with Bit-interleaving Capability.

An Ultra-Low-Voltage Bit-Interleaved Synthesizable 13T SRAM Circuit.

A Low-Power Variation-Tolerant 7T SRAM With Enhanced Read Sensing Margin for Voltage Scaling

A Half-Select Disturb-Free 11T SRAM Cell with Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations

A 320 Mv, 6 Kb Subthreshold 10T SRAM Employing Voltage Lowering Techniques

Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

A Sub-200mV 6T SRAM in 0.13μm CMOS

Charge recycling 8T SRAM design for low voltage robust operation

A Variation-Tolerant Sub-200 Mv 6-T Subthreshold Sram

A Disturb-Free 10T SRAM Cell with High Read Stability and Write Ability for Ultra-Low Voltage Operations

Ultra8T: A Sub-Threshold 8T SRAM with Leakage Detection

9T fast‐write SRAM bit cell with no conflicts for ultra‐low voltage

An Ultra-Low-power 1 Kb Sub-Threshold SRAM in the 180 Nm CMOS Process

An ultra-low-supply-voltage ultra-low-power subthreshold SRAM bitcell design

An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches

Radiation-Hardened SRAM for Dynamic Voltage Frequency Systems

A 0.33 V 2.5 Μw Cross-Point Data-Aware Write Structure, Read-Half-select Disturb-Free Sub-Threshold SRAM in 130 Nm CMOS

Low Voltage SRAM Cell Suitable for Bit-Interleaved Structure

A Double Sensing Scheme with Selective Bitline Voltage Regulation for Ultralow-Voltage Timing Speculative SRAM