Abstract:A half-select disturb-free 11T (HF11T) static random access memory (SRAM) cell with low power, better stability and high speed is presented in this paper. The proposed SRAM cell works well with bit-interleaving design, which enhances soft-error immunity. A comparison of the proposed HF11T cell with other cutting-edge designs such as single-ended HS free 11T (SEHF11T), a shared-pass-gate 11T (SPG11T), data-dependent stack PMOS switching 10T (DSPS10T), a single-ended half-selected robust 12T (HSR12T), and 11T SRAM cells has been made. It exhibits 4.85×/9.19× less read delay ( T RA ) and write delay ( T WA ), respectively as compared to other considered SRAM cells. It achieves 1.07×/1.02× better read and write stability, respectively than the considered SRAM cells. It shows maximum reduction of 1.68×/4.58×/94.72×/9×/145× leakage power, read power, write power consumption, read power delay product (PDP) and write PDP respectively, than the considered SRAM cells. In addition, the proposed HF11T cell achieves 10.14× higher I on / I off ratio than the other compared cells. These improvements come with a trade-off, resulting in 1.13× more T RA compared to SPG11T. The simulation is performed with Cadence Virtuoso 45nm CMOS technology at supply voltage ( V DD ) of 0.6 V.

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