Radiation Resistance and Degradation Mechanism of Space GaInP/GaAs/Ge Triple-j unction Solar Cell

Dayan MA,Nuofu CHEN,Quanli TAO,Hongyu ZHAO,Hu LIU,Yiming BAI,Jikun CHEN
2017-01-01
Abstract:The distributed Bragg reflector (DBR)for space GaInP/(In)GaAs/Ge triple-junction solar cell is designed based on the TFCalc optical film design software.The reflectivity of 1 5 pairs of Al0.2Ga0.8As/Al0.9Ga0.1As DBR is as high as 9 6 % in the cen-ter wavelength of 850 nm.The light in the spectral range of 800—900 nm is reflected then absorbed twice,which enhances the anti-radiation ability of the middle subcell.The basic laws of spectral response,open-circuit voltage and short circuit current of GaInP/GaAs/Ge solar cells are obtained by ground simulation irradiation test of 1 MeV electron to the two structures.The carrier transport mechanism in cells is analyzed using the PC1D simulation program,and the variations of the majority carrier concentration and the minority carrier diffusion length with the irradiation particle fluence are obtained of 1 MeV electron irradiation.The results showed that majority carrier concentration and minority carrier diffusion length decrease with increasing the incident electron fluence. The majority carrier removal rate and the damage coefficient of minority carrier diffusion length of the original structure are higher than the new structure,which indicates that the new solar cell structure containing the Bragg reflector has a stronger resistance to radia-tion.
What problem does this paper attempt to address?