Degradation Mechanism of III-V Triple Junction Solar Cells Analyzed Using Step Stress Tests

Hwen Fen Hong,Jin Wei,Mei Hui Chiang,Zun Hao Shih,Wu Yih Uen,Yi Ru Hsu,Cheng Ban Chung,Yueh Mu Lee
DOI: https://doi.org/10.4028/www.scientific.net/amm.284-287.281
2013-01-01
Applied Mechanics and Materials
Abstract:We analyzed the degradation mechanism of GaInP/GaInAs/Ge triple junction solar cells without coating any protective film. Gradual degradation in the dark and light I-V characteristics of the solar cells were observed after the step stress accelerated degradation tests (SSADT) were conducted on these devices sequentially at 90, 110, 130 and 150°Cfor 25, 55, 85 and 135 hours, respectively. The recombination current in the depletion region at the chip perimeter of solar cells, resulting in the decrease of open-circuit voltage (VOC), fill factor (FF) and efficiency, is suggested to be the important degradation mechanism for GaInP/GaInAs/Ge triple junction solar cells.
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