Abstract:Influences of 170-keV protons beam irradiation on the static and dynamic properties of blue light InGaN/GaN multiple quantum wells (MQWs) microlight-emitting diodes (MicroLEDs) were investigated. It was interesting to find out that, although threshold voltage and light output power of Micro-LEDs deteriorated after proton irradiation, a 3-dB bandwidth was greatly improved. In quantitative terms, at the forward current density of 1 kA/cm 2 , 3-dB bandwidth increased from original 7.34 to 119.74 MHz when Micro-LED exposed to proton beam with the fluence of 5 × 1014 p/cm2. Based on the frequency response data analysis, differential carrier lifetimes of MicroLEDs, including Shockley-Read-Hall (SRH) lifetime and differential radiation recombination lifetime, were compared. The results pointed out that both SRH and recombination lifetimes became shorter after proton irradiation, indicating that competition between the nonradiative and radiative recombination processes was enhanced by proton beam. To reveal the origination of the 3-dB bandwidth improvement, photoluminescence (PL) and time-resolved PL (TRPL) spectrums of Micro-LEDs were measured. MQWs' PL spectrum with a peak wavelength of 450 nm was observed and its intensity decreased as proton fluence increasing. Meanwhile, a PL peak at 550 nm, which was well known as defect-related PL spectrum, was enhanced by proton irradiation, especially at a proton fluence of 5 × 10 13 and 5 × 10 14 p/cm 2 , proving the increase of defects in epitaxial thin films as proton fluence increasing. In the TRPL experimental study, the nonradiative recombination lifetime decreased with proton fluence, which was consistent with the results analyzed by frequency response. Overall, the improvement of 3-dB bandwidth could be mainly attributed to the decrease of carrier lifetime in MQWs, which were caused by the generation of defects due to the atom displacement effect of proton irradiation.

Proton irradiation effects on GaInP/GaAs/Ge triple junction cells

Effects of proton radiation on the InGaAs component cells of inverted metamorphic four-junction solar cells

Theoretical Analysis on GaAs Sub-Cell Doping Concentration for Triple-Junction Solar Cells Irradiated by Proton Based on TCAD Simulation

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Ab initio electronic stopping power for protons in Ga$_{0.5}$In$_{0.5}$P/GaAs/Ge triple-junction solar cells for space applications

Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells

1 MeV electron irradiation effect and damage mechanism analysis of flexible GaInP/GaAs/InGaAs solar cells

Effects of 100 MeV proton irradiation on the performance of P3HT-based perovskite solar cells

Effects of electron radiation on shielded space triple-junction GaAs solar cells

Investigation of degradation characteristics of electron irradiated GaInP/InGaAs/Ge solar cell by numerical simulation model

The effect of proton irradiation on the characteristics of InP/InGaAs heterojunction

Investigation of Proton Radiation Effect on Indium Gallium Nitride Light Emitting Diodes

Displacement Damage dose and DLTS Analyses on Triple and Single Junction solar cells irradiated with electrons and protons

Void Formation and Radiation‐induced Ion Migration in Perovskite Solar Cells under 10 MeV Proton Radiation

Simulation of proton-induced primary displacement damage in GaAs under different ambient temperatures

Proton Radiation Hardness of Organic Photovoltaics: An In‐Depth Study

In-depth investigation of low-energy proton irradiation effect on the structural and photoresponse properties of ε-Ga2O3 thin films

Effects of neutron radiation on the key component cells of upright metamorphic four-junction (UMM4J) solar cells

The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors

Mechanism Analysis of Proton Irradiation-Induced Increase of 3-Db Bandwidth of GaN-Based Microlight-Emitting Diodes for Space Light Communication

Effect of Electron Irradiation on Perovskite Films and Devices for Novel Space Solar Cells