Abstract:Gallium nitride materials, due to their excellent electrical properties and irradiation resistance, are expected to be used in future space electronics systems where electronic devices are composed of different amounts of AlxGa1–xN materials. However, most of their displacement damage studies currently focus on GaN materials, and less on AlxGa1–xN materials themselves. The mechanism of displacement damage induced by 10-keV to 300-MeV protons incident on AlxGa1–xN materials with different Al content is investigated by binary collision approximation method. The results show that the non-ionization energy loss of AlxGa1–xN material decreases with proton energy increasing. When the proton energy is lower than 40 MeV, the non-ionization energy loss becomes larger with the increase of Al content, while the trend is reversed when the proton energy increases. Analyzing the primary knock-on atoms and non-ionizing energy deposition caused by protons, it is found that the primary knock-on atoms’ spectra of different AlxGa1–xN materials are similar, but the higher the content of Al, the higher the proportion of the self primary knock-on atoms generated by elastic collisions is. For the non-ionizing energy deposition produced by protons at different depths, the energy deposition due to elastic collisions is largest at the end of the trajectory, while the energy deposition due to inelastic collisions is uniformly distributed in the front of the trajectory but decreases at the end of the trajectory. This study provides a good insight into the applications of GaN materials and devices in space radiation environment.

Simulation of proton-induced primary displacement damage in GaAs under different ambient temperatures

Experimental and Simulation Study of the Correlation Between Displacement Damage and Incident Proton Energy for GaAs Devices

Application of Displacement Damage Dose Approach to Low-Energy Proton Irradiated GaInP/GaAs/Ge Solar Cells

Effect of 100 Kev Proton Irradiation on Photoemission of Gaas/Ge Space Solar Cells

Simulation of Irradiation Damage in CsPbI 3 -Based Perovskite Solar Cells by Energetic Protons

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Simulation of irradiation damage in CsPbI3-based perovskite solar cells by energetic protons

Simulation study of displacement damage induced by protons in Al x Ga 1 − x N materials

50--170 Kev Proton Irradiation on Spectral Response in GaAs/Ge Space Solar Cell

Effects of electron radiation on shielded space triple-junction GaAs solar cells

Simulation of Displacement Damage Induced by Protons Incident on AlxGa1-xN Materials

Radiation Damage of Space GaAs/Ge Solar Cells Evaluated by Displacement Damage Dose

A Study of Electric Properties of Single-Junction Gaas Solar Cells Irradiated by Low-Energy Protons

A study on the electric properties of single-junction GaAs solar cells under the combined radiation of low-energy protons and electrons

A study on the degradation of GaAs/Ge solar cells irradiated by <200keV protons

Property Degradation of GaAs/Ge Solar Cell at Proton Irradiation

Displacement Damage Equivalence of Neutron and Proton Radiations in Triple-Junction GaInP/GaAs/Ge Solar Cells

A study on the effects of the proton flux on the irradiated degradation of GaAs/Ge solar cells

Proton irradiation effects on GaInP/GaAs/Ge triple junction cells

Simulation Study of Displacement Damage Induced by Protons in Al<sub>x</sub>Ga<sub>1</sub><em><sub>−</sub></em><sub>x</sub>N Materials

Simulation of Neutron and Proton Displacement Damage in Ultra-Wide Bandgap Semiconductor Ga2O3