The Influence of Adding Hydrogen During the Preparation of c-BN Thick Film by Radio Frequency Magnetron Sputtering Method

Yan ZHAO,Hong YIN,Hong-dong LI
DOI: https://doi.org/10.3969/j.issn.1673-1433.2016.05.005
2016-01-01
Abstract:Cubic boron nitride (c-BN)thick films were prepared on p-type silicon (100 ) substrates through radio frequency magnetron sputtering method by two step deposition technique.Hydrogen was added into the conventional argon/nitrogen mixture working gas and the influence of different hydrogen flow ratio,substrate temperature ,substrate bias and other working parameters on cubic phase content and deposition rate of c-BN films were studied.The prepared c-BN films were characterized and analyzed by scanning electron microscopy (SEM),Fourier transform infrared spectroscopy (FTIR),and X-ray diffraction (XRD).Result indicates that when substrate bias voltage of is -100V and hy-drogen rate is 7.5 sccm,the cubic phase content of the prepared c-BN is over 90% with optimum stability and its thickness can be up to over 4μm.This has established an exel-lent foundation for the application of c-BN in fields such as industrial protective coating.
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