Effects Of Ion Source Cycle Bombardment On Structure And Electrical Properties Of Tin Films Prepared By Magnetron Sputtering

Shao Tao,Sun De-En,Liang Fei-Ke,Huang Jia-Mu

DOI: https://doi.org/10.11933/j.issn.1007-9289.20160911002

2017-01-01

China surface engineering

Abstract:In order to study the effects of ion source cycle bombardment on the structure and electrical properties of titanium nitride (TiN) films, TiN films were deposited by ion source assisted magnetron sputtering at 200 degrees C. The microstructure and phase composition of the films were investigated by field emission scanning electron microscopy (FESEM), atomic force microscope (AFM) and X-ray diffraction(XRD). The resistivity of the films was measured by a four-point probe at room temperature, and the hardness and elastic modulus were tested by nanoindentation. The results show that the films have a layered structure with higher density after the ion bombardment. The surface smoothness is also improved with the average roughness decreasing from 5.2 nm to 2.7 nm. The crystallinity of thin films is enhanced with the increase of the cycle of ion bombardment, and the TiN (200) diffraction peak appears at the three cycles ion bombardment. The hardness and elastic modulus of TiN films also increase with increasing period of ion bombardment. The resistivity of TiN films reaches the lowst value, 8.1 mu Omega.cm, after two cycles ion bombardment.