Effect of low-energy ion flux irradiation on the growth of TiN film

ZG Li,XM Hua,YX Wu,S Miyake
DOI: https://doi.org/10.3321/j.issn:0412-1961.2005.10.016
IF: 1.797
2005-01-01
ACTA METALLURGICA SINICA
Abstract:TiN films were synthesized by inductively coupled plasma assisted magnetron sputtering technique. The effects of the irradiation of ion flux with high-density and low-energy (approximate to 20 eV) on the growth, microstructure and properties of TiN films have been investigated. The results show that such irradiation can alter the preferred orientation of TiN films and make the film densify. Even at a lower deposition temperature than 150 degrees C, when the incident ion/metal ratio J(i)/J(Ti) >= 4.7, the deposited films have complete (200) preferred growth, much dense microstructures, a hardness of 25 GPa and low residual stress.
What problem does this paper attempt to address?