Porosity-mediated High-performance Thermoelectric Materials
Xiaoxi Chen,Siyi Chang,Jin Chen,Pengfei Nan,Hao Wang,Shan Li,Xiyang Li,Xu Chen,Qiulin Liu,Xiaoshan Zhu,Binghui Ge,Wei Cai,Jiehe Sui,Shuqi Zheng,Fangwei Wang,Xiaolong Chen,Huaizhou Zhao
DOI: https://doi.org/10.48550/arxiv.1810.03356
2018-01-01
Abstract:Whether porosity can effectively improve thermoelectric performance is still an open question. Herein we report that thermoelectric performance can be significantly enhanced by creating porosity in n-type Mg3.225Mn0.025Sb1.5Bi0.49Te0.01, with a ZT of 0.9 at 323 K and 1.6 at 723 K, making the average ZT much higher for better performance. The large improvement at room temperature is significant considering that such a ZT value is comparable to the best ZT at this temperature in n-type Bi2Te3. The enhancement was mainly from the improved electrical mobility and multi-scale phonon scattering, particularly from the well-dispersed bismuth nano-precipitates in the porous structure. We further extend this approach to other thermoelectric materials such as half-Heuslers Nb0.56V0.24Ti0.2FeSb and Hf0.25Zr0.75NiSn0.99Sb0.01 and Bi0.5Sb1.5Te3 showing similar improvements, further advancing thermoelectric materials for applications.